Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsSmall Signal Transistor, SOT-23, NPN, 40V

October, 2011 − Rev. 10

1 Publication Order Number:

MMBT2222LT1/D

MMBT2222L, MMBT2222AL,

SMMBT2222AL

General Purpose Transistors

NPN Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

• AEC−Q101 Qualified and PPAP Capable

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MMBT2222L

MMBT2222AL, SMMBT2222AL

CEO

Vdc

Collector−Base Voltage

MMBT2222L

MMBT2222AL, SMMBT2222AL

CBO

Vdc

Emitter−Base Voltage

MMBT2222L

MMBT2222AL, SMMBT2222AL

EBO

5.0

6.0

Vdc

Collector Current − Continuous I

600 mAdc

Collector Current − Peak (Note 3) I

1100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR− 5 Board

(Note 1) T

= 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient

556 °C/W

Total Device Dissipation Alumina

Substrate (Note 2) T

= 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient

417 °C/W

Junction and Storage Temperature Range T

, T

stg

−55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

xxx = 1P or M1B

M = Date Code*

G = Pb−Free Package

COLLECTOR

BASE

EMITTER

http://onsemi.com

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

xxx M G

Summary of content (7 pages)

PAGE 1
MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.
PAGE 2
MMBT2222L, MMBT2222AL, SMMBT2222AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A V(BR)CEO 30 40 − − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222 MMBT2222A V(BR)CBO 60 75 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222 MMBT2222A V(BR)EBO 5.0 6.
PAGE 3
MMBT2222L, MMBT2222AL, SMMBT2222AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 5.0 25 35 200 − 150 − 4.0 Unit SMALL−SIGNAL CHARACTERISTICS Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A MMBT2222A, SMMBT2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.
PAGE 4
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MMBT2222L, MMBT2222AL, SMMBT2222AL 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.
PAGE 5
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) MMBT2222L, MMBT2222AL, SMMBT2222AL 30 CAPACITANCE (pF) 20 Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 0.2 0.3 20 30 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 50 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 Figure 9. Capacitances VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.1 −55°C 25°C 0.001 0.01 0.1 1.1 1.0 0.9 1 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.001 0.01 0.
PAGE 6
MMBT2222L, MMBT2222AL, SMMBT2222AL 10 10 ms 100 ms 1 Thermal Limit IC (A) 1 ms 1s 0.1 0.01 0.001 Single Pulse Test @ TA = 25°C 0.01 0.1 1 10 100 VCE (Vdc) Figure 15.
PAGE 7
MMBT2222L, MMBT2222AL, SMMBT2222AL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP D SEE VIEW C 3 HE E c 1 2 e b 0.25 q A L A1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 1.00 1.11 0.