Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsOptoelectronics & DisplaysOpto-isolator - LED controller SOIC 8

December, 2017 − Rev. 5

1 Publication Order Number:

MOCD217M/D

MOCD207M, MOCD208M,

MOCD211M, MOCD213M,

MOCD217M

8-pin SOIC Dual-Channel

Phototransistor Output

Optocoupler

These devices consist of two gallium arsenide infrared emitting

diodes optically coupled to two monolithic silicon phototransistor

detectors, in a surface mountable, small outline, plastic package. They

are ideally suited for high−density applications, and eliminate the need

for through−the−board mounting.

Features

• Closely Matched Current Transfer Ratios

• Minimum BV

CEO

of 70 V Guaranteed

– MOCD207M, MOCD208M

• Minimum BV

CEO

of 30 V Guaranteed

– MOCD211M, MOCD213M, MOCD217M

• Low LED Input Current Required for Easier Logic Interfacing

– MOCD217M

• Convenient Plastic SOIC−8 Surface Mountable Package Style, with

0.050″ Lead Spacing

• Safety and Regulatory Approvals:

– UL1577, 2,500 VAC

RMS

for 1 Minute

– DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage

• These are Pb−Free Devices

Applications

• Feedback Control Circuits

• Interfacing and Coupling Systems of Different Potentials and

Impedances

• General Purpose Switching Circuits

• Monitor and Detection Circuits

EMITTER 1

COLLECTOR 1ANODE 1

CATHODE 1

EMITTER 2

COLLECTOR 2

ANODE 2

CATHODE 2

Figure 1. Schematic

SOIC8

M SUFFIX

CASE 751DZ

www.onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

SYYX

D207

MARKING DIAGRAM

1 − Logo

2 − Device Number

3 − DIN EN/IEC60747−5−5 Option (only appears

on component ordered with this option)

4 − One−Digit Year Code, e.g., “4”

5 − Digit Work Week, Ranging from “01” to “53”

6 − Assembly Package Code

Summary of content (9 pages)

PAGE 1
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M 8-pin SOIC Dual-Channel Phototransistor Output Optocoupler www.onsemi.com These devices consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. They are ideally suited for high−density applications, and eliminate the need for through−the−board mounting.
PAGE 2
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M Safety and Insulation Ratings As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Climatic Classification < 150 VRMS I−IV < 300 VRMS I−III 55/100/21 Pollution Degree (DIN VDE 0110/1.
PAGE 3
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Value Unit Storage Temperature −40 to +125 °C TA Ambient Operating Temperature −40 to +100 °C TJ Junction Temperature −40 to +125 °C 260 for 10 seconds °C TOTAL DEVICE TSTG TSOL PD Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C 240 mW Derate Above 25°C 2.
PAGE 4
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Device Test Conditions Min Typ Max Unit EMITTER VF IR CIN Input Forward Voltage MOCD217M IF = 1 mA − 1.05 1.3 V MOCD213M IF = 10 mA − 1.15 1.5 V MOCD207M, MOCD208M, MOCD211M IF = 30 mA − 1.25 1.5 V Reverse Leakage Current All VR = 6 V − 0.001 100 mA Input Capacitance All − 18 − pF Collector−Emitter Dark Current All − 1.
PAGE 5
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M TYPICAL CHARACTERISTICS VF – FORWARD VOLTAGE (V) 1.7 1.6 1.5 1.4 TA = –55_C 1.3 1.2 TA = 25_C 1.1 TA = 100_C 1.0 1 10 10 I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) 1.8 100 VCE = 5 V NORMALIZED TO I F = 10 mA 1 0.1 IF – LED FORWARD CURRENT (mA) 0.01 0.1 10 100 Figure 3. Output Current vs. Input Current I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) 1 NORMALIZED TO TA = 25_C 0.
PAGE 6
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M SWITCHING TIME TEST CIRCUIT AND WAVEFORMS VCC = 10 V INPUT PULSE IC IF RL INPUT 10% OUTPUT OUTPUT PULSE 90% RBE tr tf ton toff Adjust IF to produce IC = 2 mA Figure 7. Switching Time Test Circuit and Waveforms Temperature (_C) REFLOW PROFILE TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 Max. Ramp−up Rate = 3°C/S Max.
PAGE 7
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M ORDERING INFORMATION Part Number Package Shipping MOCD207M Small Outline 8−Pin 100 Units / Tube MOCD207R2M Small Outline 8−Pin 2500 Units / Tape & Reel MOCD207VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube MOCD207R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel MOCD208M Small Outline 8−Pin 100 Units / Tube MOCD208R2M Small Outline 8−Pin 2500 Units / Tape & Reel MOCD208VM Small Outline 8−P
PAGE 8
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M PACKAGE DIMENSIONS SOIC8 CASE 751DZ ISSUE O www.onsemi.
PAGE 9
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.