Datasheet

NCL30000
http://onsemi.com
6
Table 3. ELECTRICAL CHARACTERISTICS (Continued)
V
MFP
= 2.4 V, V
Control
=4V, Ct=1nF, V
CS
=0V, V
ZCD
=0V, C
DRV
= 1 nF, V
CC
= 12 V, unless otherwise specified
(For typical values, T
J
=25C. For min/max values, T
J
= −40C to 125C, unless otherwise specified)
Characteristic UnitMaxTypMinSymbolTest Conditions
RAMP CONTROL
Ct Peak Voltage
V
COMP
= open V
Ct(MAX)
4.775 4.93 5.025 V
On Time Capacitor Charge Current V
COMP
= open
V
Ct
= 0 V to V
Ct(MAX)
I
charge
235 275 297
mA
Ct Capacitor Discharge Duration V
COMP
= open
V
Ct
= V
Ct(MAX)
−100 mV to 500 mV
t
Ct(discharge)
− 50 150 ns
PWM Propagation Delay
dV/dt = 30 V/ms
V
Ct
= V
Control
− Ct
(offset)
to V
DRV
= 10%
t
PWM
− 130 220 ns
ZERO CURRENT DETECTION
ZCD Arming Threshold
V
ZCD
= Increasing V
ZCD(ARM)
1.25 1.4 1.55 V
ZCD Triggering Threshold V
ZCD
= Decreasing V
ZCD(TRIG)
0.6 0.7 0.83 V
ZCD Hysteresis V
ZCD(HYS)
500 700 900 mV
ZCD Bias Current V
ZCD
= 5 V I
ZCD
− 2 − + 2
mA
Positive Clamp Voltage I
ZCD
= 3 mA V
CL(POS)
9.8 10 12 V
Negative Clamp Voltage I
ZCD
= −2 mA V
CL(NEG)
−0.9 −0.7 −0.5 V
ZCD Propagation Delay V
ZCD
= 2 V to 0 V ramp,
dV/dt = 20 V/ms
V
ZCD
= V
ZCD(TRIG)
to V
DRV
= 90%
t
ZCD
− 100 170 ns
Minimum ZCD Pulse Width t
SYNC
− 70 − ns
Maximum Off Time in Absence of ZCD
Transition
Falling V
DRV
= 10% to
Rising V
DRV
= 90%
t
start
75 165 300
ms
DRIVE
Drive Resistance
I
source
= 100 mA
I
sink
= 100 mA
R
OH
R
OL
−
−
12
6
20
13
W
Rise Time 10% to 90% t
rise
− 35 80 ns
Fall Time 90% to 10% t
fall
− 25 70 ns
Drive Low Voltage V
CC
= V
CC(on)
−200 mV,
I
sink
= 10 mA
V
out(start)
− − 0.2 V
CURRENT SENSE
Current Sense Voltage Threshold
V
ILIM
0.45 0.5 0.55 V
Leading Edge Blanking Duration V
CS
= 2 V, V
DRV
= 90% to 10% t
LEB
100 195 350 ns
Overcurrent Detection Propagation
Delay
dV/dt = 10 V/ms
V
CS
= V
ILIM
to V
DRV
= 10%
t
CS
40 100 170 ns
Current Sense Bias Current V
CS
= 2 V I
CS
−1 − 1
mA