Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsDev KitsPCB design board

September, 2013 − Rev. 3

1 Publication Order Number:

NCV8873/D

NCV8873

Automotive Grade

Non-Synchronous Boost

Controller

The NCV8873 is an adjustable output non−synchronous boost

controller which drives an external N−channel MOSFET. The device

uses peak current mode control with internal slope compensation. The

IC incorporates an internal regulator that supplies charge to the gate

driver.

Protection features include internally−set soft−start, undervoltage

lockout, cycle−by−cycle current limiting and thermal shutdown.

Additional features include low quiescent current sleep mode and

externally−synchronizable switching frequency.

Features

• Peak Current Mode Control with Internal Slope Compensation

• 0.2 V $3% Reference Voltage for Constant Current Loads

• Fixed Frequency Operation

• Wide Input Voltage Range of 3.2 V to 40 V, 45 V Load Dump

• Input Undervoltage Lockout (UVLO)

• Internal Soft−Start

• Low Quiescent Current in Sleep Mode

• Cycle−by−Cycle Current Limit Protection

• Hiccup−Mode Overcurrent Protection (OCP)

• Thermal Shutdown (TSD)

• This is a Pb−Free Device

MARKING

DIAGRAM

http://onsemi.com

SOIC−8

D SUFFIX

CASE 751

PIN CONNECTIONS

1 8

(Top View)

EN/SYNC

ISNS

GND

GDRV

VFB

VIN

VDRV

8873xx = Specific Device Code

xx = 00

A = Assembly Location

L = Wafer Lot

Y = Year

W = Work Week

G = Pb−Free Package

8873xx

ALYW

Device Package Shipping

†

ORDERING INFORMATION

NCV887300D1R2G SOIC−8

(Pb−Free)

2500 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Summary of content (11 pages)

PAGE 1
NCV8873 Automotive Grade Non-Synchronous Boost Controller The NCV8873 is an adjustable output non−synchronous boost controller which drives an external N−channel MOSFET. The device uses peak current mode control with internal slope compensation. The IC incorporates an internal regulator that supplies charge to the gate driver. Protection features include internally−set soft−start, undervoltage lockout, cycle−by−cycle current limiting and thermal shutdown.
PAGE 2
NCV8873 6 TEMP VDRV FAULT LOGIC EN/SYNC 1 OSC SC VC 5 CLK 7 PWM EN/ SYNC DRIVE LOGIC 4 2 CL CSA 3 + RC 8 Gm CC SS Vg VIN CDRV VDRV Cg L D1 Vo Q GDRV D2 Co ISNS GND RSNS Dn VFB RF1 Vref Figure 1. Simplified Block Diagram and Application Schematic PACKAGE PIN DESCRIPTIONS Pin No. Pin Symbol 1 EN/SYNC 2 ISNS Current sense input.
PAGE 3
NCV8873 ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND, unless otherwise indicated) Rating Value Unit −0.3 to 40 V Peak Transient Voltage (Load Dump on VIN) 45 V Dc Supply Voltage (VDRV, GDRV) 12 V −0.3 to 6 V −0.3 to 3.6 V Dc Voltage (EN/SYNC) −0.3 to 6 V Dc Voltage Stress (VIN − VDRV)* −0.
PAGE 4
NCV8873 ELECTRICAL CHARACTERISTICS (−40°C < TJ < 150°C, 3.2 V < VIN < 40 V, unless otherwise specified) Min/Max values are guaranteed by test, design or statistical correlation. Characteristic Symbol Conditions Min Typ Max Unit GENERAL Quiescent Current, Sleep Mode Iq,sleep VIN = 13.2 V, EN = 0, TJ = 25°C − 2.0 − mA Quiescent Current, Sleep Mode Iq,sleep VIN = 13.2 V, EN = 0, −40°C < TJ < 125°C − 2.0 6.
PAGE 5
NCV8873 ELECTRICAL CHARACTERISTICS (−40°C < TJ < 150°C, 3.2 V < VIN < 40 V, unless otherwise specified) Min/Max values are guaranteed by test, design or statistical correlation. Characteristic Symbol Conditions Min Typ Max Unit 0.8 1.2 1.5 mS 2.0 − − MW VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER Transconductance gm,vea VEA output resistance Ro,vea VFB input bias current Ivfb,bias VFB – Vref = ± 20 mV − 0.5 2.0 mA Vref 0.194 0.200 0.
PAGE 6
NCV8873 TYPICAL PERFORMANCE CHARACTERISTICS 6 TJ = 25°C 6 Iq,sleep, SLEEP CURRENT (mA) Iq,sleep, SLEEP CURRENT (mA) 7 5 4 3 2 1 0 0 10 20 30 VIN, INPUT VOLTAGE (V) 4 3 2 1 0 −50 40 Figure 2. Sleep Current vs. Input Voltage ton,min MINIMUM ON TIME (ns) Iq,on, QUIESCENTCURRENT (mA) 4.7 4.6 4.5 VIN = 13.2 V fs= 1000 kHz 0 50 100 150 TJ, JUNCTION TEMPERATURE (°C) 123 121 119 117 115 −40 200 Figure 4. Quiescent Current vs. Temperature 10 60 110 TJ, JUNCTION TEMPERATURE (°C) 160 Figure 5.
PAGE 7
NCV8873 TYPICAL PERFORMANCE CHARACTERISTICS 8.0 TJ = 25°C 6 Ienable, PULLDOWN CURRENT (mA) Ienable, PULLDOWN CURRENT (mA) 7 5 4 3 2 1 0 0 1 2 3 4 Venable, VOLTAGE (V) 5 6 7.5 7.0 6.5 6.0 5.5 5.0 −40 10 60 110 TJ, JUNCTION TEMPERATURE (°C) Figure 8. Enable Pulldown Current vs. Voltage Figure 9. Enable Pulldown Current vs. Temperature http://onsemi.
PAGE 8
NCV8873 THEORY OF OPERATION Vg L D1 Oscillator VO S GDRV Q Gate Driver R PWM Comparator Q D2 CO ISNS RSNS CSA Dn Slope Compensation VFB Gm RF1 VREF NCV8873 Compensation Figure 10. Current Mode Control Schematic Current Mode Control hiccup mode. The part will remain off for the hiccup time and then go through the soft−start procedure. The NCV8873 incorporates a current mode control scheme, in which the PWM ramp signal is derived from the power switch current.
PAGE 9
NCV8873 APPLICATION INFORMATION Design Methodology cycle will be a complex value. This is because a Boost converter cannot have an output voltage lower than the input voltage. In situations where the input voltage is higher than the output, the output will follow the input (minus the diode drop of the Boost diode) and the converter will not attempt to switch.
PAGE 10
NCV8873 8.
PAGE 11
NCV8873 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.