Data Sheet

Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= -250 µA -20 V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1 µA
T
J
= 55°C
-10 µA
I
GSSF
Gate - Body Leakage, Forward V
GS
= 8 V, V
DS
= 0 V 100 nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -8 V, V
DS
= 0 V
-100 nA
ON CHARACTERISTICS (Note 1)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250 µA -0.4 -0.7 -1 V
T
J
= 125°C -0.3 -0.56 -0.7
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -12 A
0.041 0.05
Ω
T
J
= 125°C
0.06 0.08
R
DS(ON)
Static Drain-Source On-Resistance V
GS
= -2.7 V, I
D
= -10 A 0.059 0.07
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -2.5 V, I
D
= -10 A
0.064 0.075
I
D(on)
On-State Drain Current V
GS
= -4.5 V, V
DS
= -5 V -24 A
g
FS
Forward Transconductance
V
DS
= -5 V, I
D
= -12 A
14 S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
1590 pF
C
oss
Output Capacitance 725 pF
C
rss
Reverse Transfer Capacitance 215 pF
SWITCHING CHARACTERISTICS (Note 1)
t
D(on)
Turn - On Delay Time V
DD
= -20 V, I
D
= -3 A,
V
GS
= -5 V, R
GEN
= 6 Ω
15 30 nS
t
r
Turn - On Rise Time 27 60 nS
t
D(off)
Turn - Off Delay Time 120 250 nS
t
f
Turn - Off Fall Time 70 150 nS
Q
g
Total Gate Charge V
DS
= -10 V,
I
D
= -24 A, V
GS
= -5 V
25 35 nC
Q
gs
Gate-Source Charge 5 nC
Q
gd
Gate-Drain Charge 10 nC
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