Data Sheet

-50 -25 0 25 50 75 100 125 150 175
0.96
0.98
1
1.02
1.04
1.06
1.08
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = -250µA
D
J
BV , NORMALIZED
DSS
0 0.2 0.4 0.6 0.8 1 1.2
0.0001
0.001
0.01
0.1
1
4
10
20
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V = 0V
GS
SD
S
0 10 20 30 40
0
2
4
6
8
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
V = -5V
DS
-10V
-15V
I = -24A
D
0.1 0.2 0.5 1 2 5 10 20
100
200
300
500
1000
2000
3000
4000
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
D
S
-V
DD
R
L
V
OUT
V
GS
DUT
V
IN
R
GEN
G
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on off
d(off)
f
r
d(on)
t t
t
t
t
t
INVERTED
10%
PULSE WIDTH
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms.
Typical Electrical Characteristics (continued)
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