Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsMOSFET P, 20 V 730 mW SOT-23

October, 2014 − Rev. 11

1 Publication Order Number:

NTR4101P/D

NTR4101P, NTRV4101P

Trench Power MOSFET

−20 V, Single P−Channel, SOT−23

Features

• Leading −20 V Trench for Low R

DS(on)

• −1.8 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint

• NTRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Load/Power Management for Portables

• Load/Power Management for Computing

• Charging Circuits and Battery Protection

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Parameter

Symbol Value Unit

Drain−to−Source Voltage V

DSS

−20 V

Gate−to−Source Voltage V

±8.0 V

Continuous Drain

Current (Note 1)

Steady

State

= 25°C

−2.4

= 85°C −1.7

t ≤ 10 s T

= 25°C −3.2

Power Dissipation

(Note 1)

Steady

State

= 25°C P

0.73

t ≤ 10 s 1.25

Continuous Drain

Current (Note 2)

Steady

State

= 25°C

−1.8

= 85°C −1.3

Power Dissipation

(Note 2)

= 25°C P

0.42 W

Pulsed Drain Current

tp = 10 ms

−18 A

ESD Capability (Note 3) C = 100 pF,

RS = 1500 W

ESD 225 V

Operating Junction and Storage Temperature T

STG

−55 to

150

°C

Source Current (Body Diode) I

−2.4 A

Single Pulse Drain−to−Source Avalanche

Energy (V

= −8 V, I

= −1.8 Apk, L = 10 mH,

= 25 W)

EAS 16 mJ

Lead Temperature for Soldering

Purposes (1/8” from case for 10 s)

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Device Package Shipping

†

ORDERING INFORMATION

P−Channel MOSFET

SOT−23

CASE 318

STYLE 21

TR4 MG

TR4 = Device Code

M = Date Code

G = Pb−Free Package

MARKING DIAGRAM &

PIN ASSIGNMENT

Drain

Gate

Source

NTR4101PT1G

www.onsemi.com

SOT−23

(Pb−Free)

3000 / Tape &

Reel

(BR)DSS

DS(ON)

TYP I

MAX

−20 V

70 mW @ −4.5 V

−3.2 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

www.onsemi.com

(Note: Microdot may be in either location)

NTRV4101PT1G

90 mW @ −2.5 V

112 mW @ −1.8 V

Summary of content (5 pages)

PAGE 1
NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS(on) −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) TYP ID MAX 70 mW @ −4.5 V −20 V −3.
PAGE 2
NTR4101P, NTRV4101P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 170 °C/W Junction−to−Ambient − t < 10 s (Note 1) RqJA 100 Junction−to−Ambient − Steady State (Note 2) RqJA 300 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3.
PAGE 3
NTR4101P, NTRV4101P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 10 TJ = 25°C VGS = −10 V − −2.4 V −2.2 V 8 6 −2.0 V 4 −1.8 V . −1.6 V 2 0 25°C 8 125°C 7 6 5 4 3 2 1 VDS ≥ 20 V 0 0 2 1 3 4 5 6 7 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 3 1 2 4 5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2.
PAGE 4
NTR4101P, NTRV4101P 1000 TJ = 25°C C, CAPACITANCE (pF) VGS = 0 V 800 Ciss 600 400 Coss 200 Crss 0 0 2 4 6 8 12 10 14 16 18 20 4.0 QT 3.5 3.0 2.5 VDS 2.0 1.5 1.0 ID = −1.6 A TJ = 25°C 0.5 0 2 4 6 Qg, TOTAL GATE CHARGE (nC) 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 8 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge 1000 5 VDD = −10 V ID = −1.6 A VGS = −4.
PAGE 5
NTR4101P, NTRV4101P PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 1.00 1.11 0.035 0.040 0.044 A1 0.01 0.06 0.10 0.001 0.002 0.004 b 0.37 0.44 0.50 0.