Datasheet
NTR4101P, NTRV4101P
www.onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
170
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
R
q
JA
100
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
300
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(V
GS
= 0 V, I
D
= −250 mA)
V
(BR)DSS
−20 V
Zero Gate Voltage Drain Current (Note 4)
(V
GS
= 0 V, V
DS
= −16 V)
I
DSS
−1.0
mA
Gate−to−Source Leakage Current
(V
GS
= ±8.0 V, V
DS
= 0 V)
I
GSS
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(V
GS
= V
DS
, I
D
= −250 mA)
V
GS(th)
−0.4 −0.72 −1.2 V
Drain−to−Source On−Resistance
(V
GS
= −4.5 V, I
D
= −1.6 A)
(V
GS
= −2.5 V, I
D
= −1.3 A)
(V
GS
= −1.8 V, I
D
= −0.9 A)
R
DS(on)
70
90
112
85
120
210
mW
Forward Transconductance (V
DS
= −5.0 V, I
D
= −2.3 A) g
FS
7.5 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
(V
GS
= 0 V, f = 1 MHz, V
DS
= −10 V)
C
iss
675 pF
Output Capacitance C
oss
100
Reverse Transfer Capacitance C
rss
75
Total Gate Charge (V
GS
= −4.5 V, V
DS
= −10 V, I
D
= −1.6 A) Q
G(tot)
7.5 8.5 nC
Gate−to−Source Gate Charge (V
DS
= −10 V, I
D
= −1.6 A) Q
GS
1.2 nC
Gate−to−Drain “Miller” Charge (V
DS
= −10 V, I
D
= −1.6 A) Q
GD
2.2 nC
Gate Resistance R
G
6.5
W
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
(V
GS
= −4.5 V, V
DS
= −10 V,
I
D
= −1.6 A, R
G
= 6.0 W)
t
d(on)
7.5
ns
Rise Time t
r
12.6
Turn−Off Delay Time t
d(off)
30.2
Fall Time t
f
21.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (V
GS
= 0 V, I
S
= −2.4 A) V
SD
−0.82 −1.2 V
Reverse Recovery Time
(V
GS
= 0 V,
dI
SD
/dt = 100 A/ms, I
S
= −1.6 A)
t
rr
12.8 15 ns
Charge Time t
a
9.9 ns
Discharge Time t
b
3.0 ns
Reverse Recovery Charge Q
rr
1008 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.