Datasheet

NTR4101P, NTRV4101P
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
V
GS
= 0 V
0
10
4
800
400
0
8
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
064
4.0
1.0
0
Q
g
, TOTAL GATE CHARGE (nC)
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS
)
T
J
= 25°C
C
oss
C
iss
C
rss
I
D
= −1.6 A
T
J
= 25°C
2.0
3.0
Q
gd
Q
gs
101
10
1
100
R
G
, GATE RESISTANCE (OHMS)
t, TIME (ns)
V
DD
= −10 V
I
D
= −1.6 A
V
GS
= −4.5 V
1000
3.5
t
d(off)
t
d(on)
t
f
t
r
6
82
0
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
−I
S
, SOURCE CURRENT (A)
V
GS
= 0 V
T
J
= 25°C
1.
0
0.2 0.4
0.5
4.5
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
2
1000
600
200
QT
100
0.6 0.8
12 14 16 18 20
1.5
2.5
3.5
0.5
1.5
2.5
V
GS
V
DS
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
R
DS(on)
Limit
Thermal Limit
Package Limit
V
GS
≤ 10 V
Single Pulse
T
C
= 25°C
10 ms
100 ms
1 ms
10 ms
100
10
1
0.1
0.01
1001010.10.01
dc