Data Sheet

QEB363 Subminiature Plastic Infrared Emitting Diode
©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEB363 Rev. 1.0.0 2
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics
(T
A
= 25°C)
Symbol Parameter Rating Unit
T
OPR
Operating Temperature -40 to +100 °C
T
STG
Storage Temperature -40 to +100 °C
T
SOL-I
Soldering Temperature (Iron)
(2,3,4)
240 for 5 sec °C
T
SOL-F
Soldering Temperature (Flow)
(2,3)
260 for 10 sec °C
I
F
Continuous Forward Current 50 mA
V
R
Reverse Voltage 5 V
P
D
Power Dissipation
(1)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
P
Peak Emission Wavelength I
F
= 100mA 940 nm
Θ Emission Angle I
F
= 100mA ±12 °
V
F
Forward Voltage I
F
= 100mA, t
p
= 20ms 1.6 V
I
R
Reverse Current V
R
= 5V 100 µA
I
e
Radiant Intensity I
F
= 100mA, tp = 20ms 8 mW/sr
t
r
Rise Time I
F
= 100mA 1 µs
t
f
Fall Time t
p
= 20ms 1 µs