Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsPhotoelectric SensorsObject detector 1 pc(s)

November, 2017 − Rev. 4

1 Publication Order Number:

QRE1113/D

QRE1113, QRE1113GR

Miniature Reflective

Object Sensor

Features

• Phototransistor Output

• No Contact Surface Sensing

• Miniature Package

• Lead Form Style: Gull Wing

• Two Leadform Options:

♦ Through Hole (QRE1113)

♦ SMT Gull Wing (QRE1113GR)

• Two Packaging Options:

♦ Tube (QRE1113)

♦ Tape and Reel (QRE1113GR)

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Symbol Parameter Value Unit

OPR

Operating Temperature −40 to +85 °C

STG

Storage Temperature −40 to +90

°C

SOL−I

Soldering Temperature (Iron)

(Notes 2, 3, 4)

240 for 5 s

°C

SOL−F

Soldering Temperature (Flow)

(Notes 3, 4)

260 for 10 s

°C

EMITTER

Continuous Forward Current 50 mA

Reverse Voltage 5 V

Peak Forward Current (Note 5) 1 A

Power Dissipation (Note 1) 75 mW

SENSOR

CEO

Collector-Emitter Voltage 30 V

ECO

Emitter-Collector Voltage 5 V

Collector Current 20 mA

Power Dissipation (Note 1) 50 mW

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Derate power dissipation linearly 1.00 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16″ (1.6 mm) from housing.

5. Pulse conditions: tp = 100 ms; T = 10 ms.

www.onsemi.com

REFLECTIVE RECTANGULAR SURFACE MOUNT

CASE 100CY

REFLECTIVE RECTANGULAR THROUGH HOLE

CASE 100AQ

12 34

Pin 1: Anode

Pin 2: Cathode

Pin 3: Collector

Pin 4: Emitter

Device Package Shipping

†

ORDERING INFORMATION

QRE1113 Reflector Regulator

(Surface Mount)

1600 / Tube

QRE1113GR Reflector Regulator

(Through Hole)

1000 /

Tape & Reel

Summary of content (8 pages)

PAGE 1
QRE1113, QRE1113GR Miniature Reflective Object Sensor Features • • • • • • Phototransistor Output No Contact Surface Sensing Miniature Package Lead Form Style: Gull Wing Two Leadform Options: ♦ Through Hole (QRE1113) ♦ SMT Gull Wing (QRE1113GR) Two Packaging Options: ♦ Tube (QRE1113) ♦ Tape and Reel (QRE1113GR) www.onsemi.
PAGE 2
QRE1113, QRE1113GR ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit 1.2 1.
PAGE 3
QRE1113, QRE1113GR 1.0 1.0 IF = 10 mA VCE = 5 V TA = 25˚C 0.8 IC(ON) − COLLECTOR CURRENT (mA) IC(ON) − NORMALIZED COLLECTOR CURRENT TYPICAL PERFORMANCE CURVES d 0 0.6 0.4 Sensing Object: White Paper (90% reflective) 0.2 Mirror 0.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 0 4 d−DISTANCE (mm) 20 102 ICEO − NORMALIZED DARK CURRENT IC(ON) − NORMALIZED COLLECTOR CURRENT 16 Figure 3. Collector Current vs. Forward Current 2.0 d = 1 mm, 90% reflection TA = 25˚C 1.6 1.4 IF = 25mA 1.
PAGE 4
QRE1113, QRE1113GR TYPICAL PERFORMANCE CURVES (Continued) 100 50 VCC = 10 V tpw = 100 us T=1ms TA = 25˚C RISE AND FALL TIME (ms) IF − FORWARD CURRENT (mA) TA = 25˚C 40 30 20 10 0 1.0 1.1 1.2 1.3 1.4 tf IC = 0.3 mA tr 10 tf tr IC = 1 mA 1 0.1 1.5 1 10 RL − LOAD RESISTANCE (kW) VF − FORWARD VOLTAGE (V) Figure 6. Forward Current vs. Forward Voltage Figure 7. Rise and Fall Time vs. Load Resistance RELATIVE RADIANT INTENSITY VF − FORWARD VOLTAGE (V) 3.0 2.5 2.0 IF = 50 mA 1.
PAGE 5
QRE1113, QRE1113GR TAPING DIMENSIONS FOR GR OPTION Progressive Direction 2.0±0.05 4.0 ø1.5 0.25 1.75 5.5±0.05 12.0±0.3 4.75 3.73 8.0 1.98 General tolerance ±0.1 Dimensions in mm Figure 10. Taping Dimensions for GR Option REEL DIMENSIONS 2.2 ± 0.5 ø178.0 ± 1.0 ø60.0 ± 0.5 ø13.0 ± 0.5 9.0 ± 0.5 12.0 ± 0.15 Figure 11. Reel Dimensions www.onsemi.
PAGE 6
QRE1113, QRE1113GR PACKAGE DIMENSIONS ARUSM−313 / REFLECTIVE RECTANGULAR SURFACE MOUNT CASE 100CY ISSUE O www.onsemi.
PAGE 7
QRE1113, QRE1113GR PACKAGE DIMENSIONS REFLECTIVE RECTANGULAR THROUGH HOLE CASE 100AQ ISSUE O www.onsemi.
PAGE 8
QRE1113, QRE1113GR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.