Data Sheet

QRE1113, QRE1113GR
www.onsemi.com
2
ELECTRICAL/OPTICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Symbol
Parameter Conditions Min Typ Max Unit
INPUT DIODE
V
F
Forward Voltage I
F
= 20 mA 1.2 1.6 V
l
R
Reverse Leakage Current V
R
= 5 V 10
mA
l
PE
Peak Emission Wavelength I
F
= 20 mA 940 nm
OUTPUT TRANSISTOR
l
D
Collector-Emitter Dark Current I
F
= 0 mA, V
CE
= 20 V 100 nA
COUPLED
l
C(ON)
On-State Collector Current I
F
= 20 mA, V
CE
= 5 V (Note 6) 0.10 0.90 mA
I
CX
Cross-Talk Collector Current I
F
= 20 mA, V
CE
= 5 V (Note 7) 1
mA
V
CE(SAT)
Saturation Voltage 0.3 V
t
r
Rise Time V
CC
= 5 V, l
C(ON)
= 100 mA, R
L
= 100 kW 20
ms
t
f
Fall Time 20
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Measured using an aluminum alloy mirror at d = 1 mm.
7. No reflective surface at close proximity.
REFLOW PROFILE
Figure 1. Reflow Profile
Time (seconds)
1°C to 5°C/sec
1°C to 5°C/sec
260°C max. for 10 sec. max.
260°C
120 sec. max.
60 sec. max.
above 220°C
Pre−heating
180°C to 200°C
220°C
Temperature (5C)