Data Sheet

©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSD2030 Rev. 1.1.1 2
QSD2030 — Plastic Silicon Photodiode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
Electrical/Optical Characteristics (T
A
=25°C)
Symbol Parameter Rating Unit
T
OPR
Operating Temperature -40 to +100 °C
T
STG
Storage Temperature -40 to +100 °C
T
SOL-I
Soldering Temperature (Iron)
(2,3,4)
240 for 5 sec °C
T
SOL-F
Soldering Temperature (Flow)
(2,3)
260 for 10 sec °C
V
BR
Reverse Breakdown Voltage 50 V
P
D
Power Dissipation
(1)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
PS
Peak Sensitivity Wavelength 880 nm
λ
SR
Wavelength Sensitivity Range 400 1100 nm
Θ Reception Angle ±20 °
V
F
Forward Voltage I
F
= 80mA 1.3 V
I
D
Reverse Dark Current V
R
= 10V, Ee = 0 10 nA
I
L
Reverse Light Current Ee = 0.5mW/cm
2
, V
R
= 5V,
λ = 950nm
15 25 µA
V
O
Open Circuit Voltage Ee = 0.5mW/cm
2
, λ = 880nm 420 mV
TC
V
Temperature Coefficient of V
O
+0.6 mV / K
I
SC
Short Circuit Current Ee = 0.5mW/cm
2
, λ = 880nm 50 µA
TC
I
Temperature Coefficient of I
SC
+0.3 % / K
C Capacitance V
R
= 0, f = 1MHz, Ee = 0 60 pF
t
r
Rise Time V
R
= 5V, R
L
= 50 Ω , λ = 950nm 5 ns
t
f
Fall Time 5