Data Sheet

QSD2030F — Plastic Silicon Photodiode
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSD2030F Rev. 1.3 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only.
Values are at T
A
= 25°C unless otherwise specified.
Notes:
1. RMA flux is recommended.
2. Methanol or isopropyl alcohols are recommended as cleaning agents.
3. Soldering iron tip 1/16 inch (1.6 mm) minimum from housing.
4. Derate power dissipation linearly 1.33 mW/°C above 25°C.
Electrical / Optical Characteristics
Values are at T
A
= 25°C unless specified otherwise.
Symbol Parameter Min. Unit
T
OPR
Operating Temperature -40 to +100
°C
T
STG
Storage Temperature -40 to + 100
T
SOL-I
Soldering Temperature (Iron)
(1,2,3)
240 for 5 s
T
SOL-F
Soldering Temperature (Flow)
(1,2)
260 for 10 s
V
BR
Reverse Breakdown Voltage 50 V
P
D
Power Dissipation
(4)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units

PS
Peak Sensitivity Wavelength
880 nm

SR
Wavelength Sensitivity Range 700
1100 nm
 Reception Angle ±20
o
V
F
Forward Voltage I
F
= 80 mA 1.3 V
I
D
Reverse Dark Current V
R
= 10 V, E
e
= 0
10
nA
I
L
Reverse Light Current
E
e
= 0.5 mW/cm
2
,
V
R
= 5 V, = 950 nm
15 25 A
V
O
Open Circuit Voltage
E
e
= 0.5 mW/cm
2
,
= 880 nm
420 mV
TC
V
Temperature Coefficient of V
O
+0.6 mV/K
I
SC
Short Circuit Current
E
e
= 0.5 mW/cm
2
,
= 880 nm
50 A
TC
I
Temperature Coefficient of I
SC
+0.3 %/K
C Capacitance V
R
= 0, f = 1 MHz, E
e
= 0 15 pF
t
r
Rise Time
V
R
= 5 V, R
L
= 50 ,
= 950 nm
5
ns
t
f
Fall Time 5