Data Sheet

©2004 Fairchild Semiconductor Corporation
RFD14N05L, RFD14N05LSM Rev. C0
RFD14N05L, RFD14N05LSM
N-Channel Logic Level Power MOSFET
50 V, 14 A, 100 mΩ
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V-5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Features
• 14A, 50V
•r
DS(ON)
= 0.100Ω
• Temperature Compensating PSPICE
®
Model
• Can be Driven Directly from CMOS, NMOS, and
TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
•175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-251AA JEDEC TO-252AA
Ordering Information
PART NUMBER PACKAGE BRAND
RFD14N05L TO-251AA 14N05L
RFD14N05LSM TO-252AA 14N05L
RFD14N05LSM9A TO-252AA 14N05L
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A.
G
D
S
SOURCE
DRAIN (FLANGE)
GATE
DRAIN
GATE
SOURCE
DRAIN (FLANGE)
Data Sheet October 2013