Data Sheet

©2004 Fairchild Semiconductor Corporation
RFD14N05L, RFD14N05LSM
Rev. C0
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
RFD14N05L, RFD14N05LSM,
RFD14N05LSM9A
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
50 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
50 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±10 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
14
Refer to Peak Current Curve
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
48
0.32
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V, Figure 13 50 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA, Figure12 1 - 2 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 40V, V
GS
= 0V - - 1 µA
V
DS
= 40V, V
GS
= 0V, T
C
= 150
o
C--50µA
Gate to Source Leakage Current I
GSS
V
GS
= ±10V - - ±100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= 14A, V
GS
= 5V, Figures 9, 11 - - 0.100 Ω
Turn-On Time t
(ON)
V
DD
= 25V, I
D
= 7A,
R
L
= 3.57Ω, V
GS
= 5V,
R
GS
= 0.6Ω
--60ns
Turn-On Delay Time t
d(ON)
-13 - ns
Rise Time t
r
-24 - ns
Turn-Off Delay Time t
d(OFF)
-42 - ns
Fall Time t
f
-16 - ns
Turn-Off Time t
(OFF)
- - 100 ns
Total Gate Charge Q
g(TOT)
V
GS
= 0V to 10V V
DD
= 40V, I
D
= 14A,
R
L
= 2.86Ω
Figures 20, 21
- - 40 nC
Gate Charge at 5V Q
g(5)
V
GS
= 0V to 5V - - 25 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0V to 1V - - 1.5 nC
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Figure 14
- 670 - pF
Output Capacitance C
OSS
- 185 - pF
Reverse Transfer Capacitance C
RSS
-50 - pF
Thermal Resistance Junction to Case R
θJC
- - 3.125
o
C/W
Thermal Resistance Junction to Ambient R
θJA
TO-251 - - 100
o
C/W
R
θJA
TO-252
- -
100
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
SD
I
SD
= 14A - - 1.5 V
Diode Reverse Recovery Time t
rr
I
SD
= 14A, dI
SD
/dt = 100A/µs - - 125 ns
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFD14N05L, RFD14N05LSM