Data Sheet

RFP50N06 Rev. C0

RFP50N06

N-Channel Power MOSFET

60V, 50A, 22 mΩ

These N-Channel power MOSFETs are manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

Formerly developmental type TA49018.

Features

• 50A, 60V

•r

DS(ON)

= 0.022Ω

• Temperature Compensating PSPICE

Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175

C Operating Temperature

Symbol

Packaging

Ordering Information

PART NUMBER PACKAGE BRAND

RFP50N06 TO-220AB RFP50N06

JEDEC TO-220AB

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

Data Sheet

September 2013