Data Sheet

©2002 Fairchild Semiconductor Corporation
RFP50N06 Rev. C0
NOTE: Refer to Fairchild Application Notes 9321 and 9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
RFP50N06
Typical Performance Curves Unless Otherwise Specified (Continued)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
300
100
10
1
0.01 0.1 1 10
t
AV ,
TIME IN AVALANCHE (ms)
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R ≠ 0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
AS,
AVALANCHE CURRENT (A)
125
100
75
50
25
0
0 1.5 3.0 4.5 6.0 7.5
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80µs
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
012345678910
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
125
100
75
50
25
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-55
o
C
175
o
C
25
o
C
V
DD
= 15V
2.5
2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 120 160 200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
PULSE DURATION = 80µs
V
GS
= 10V, I
D
= 50A
ON RESISTANCE
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 160120 200
THRESHOLD VOLTAGE
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED GATE
V
GS
= V
DS
, I
D
= 250µA
2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 120 160 200
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250µA