Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsThyristors & TriacsSensitive gate

 Semiconductor Components Industries, LLC, 2001

April, 2001 – Rev. 4

1 Publication Order Number:

2N6504/D

2N6504 Series

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supply crowbar circuits.

• Glass Passivated Junctions with Center Gate Fire for Greater

Parameter Uniformity and Stability

• Small, Rugged, Thermowatt Constructed for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 Volts

• 300 A Surge Current Capability

• Device Marking: Logo, Device Type, e.g., 2N6504, Date Code

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

*Peak Repetitive Off–State Voltage (Note 1.)

(Gate Open, Sine Wave 50 to 60 Hz,

= 25 to 125°C)

2N6504

2N6505

2N6507

2N6508

2N6509

DRM,

RRM

100

400

600

800

Volts

On-State RMS Current

(180° Conduction Angles; T

= 85°C)

T(RMS)

25 A

Average On-State Current

(180° Conduction Angles; T

= 85°C)

T(AV)

16 A

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T

= 100°C)

TSM

250 A

Forward Peak Gate Power

(Pulse Width ≤ 1.0 µs, T

= 85°C)

20 Watts

Forward Average Gate Power

(t = 8.3 ms, T

= 85°C)

G(AV)

0.5 Watts

Forward Peak Gate Current

(Pulse Width ≤ 1.0 µs, T

= 85°C)

2.0 A

Operating Junction Temperature Range T

–40 to

+125

°C

Storage Temperature Range T

stg

–40 to

+150

°C

*Indicates JEDEC Registered Data

1. V

DRM

and V

RRM

for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

SCRs

25 AMPERES RMS

50 thru 800 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

Device Package Shipping

ORDERING INFORMATION

2N6504 TO220AB 500/Box

2N6505 TO220AB

2N6507 TO220AB

http://onsemi.com

500/Box

TO–220AB

CASE 221A

STYLE 3

PIN ASSIGNMENT

Anode

Gate

Cathode

Anode

2N6508 TO220AB 500/Box

2N6509 TO220AB 500/Box

MARKING

DIAGRAM

YY WW

650x

x = 4, 5, 7, 8 or 9

YY = Year

WW = Work Week

Summary of content (8 pages)

PAGE 1
2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
PAGE 2
N6504 Series *THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Max Unit RθJC 1.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit – – – – 10 2.0 µA mA VTM – – 1.8 Volts IGT – – 9.0 – 30 75 mA *Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms, TC = –40°C) VGT – 1.0 1.
PAGE 3
2N6504 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) 13 0 32 12 0 P(AV) , AVERAGE POWER (WATTS)
PAGE 4
2N6504 Series 100 70 50 30 125°C 25°C 10 7.0 5.0 3.0 2.0 300 1.0 275 0.7 250 0.5 225 0.3 0.2 0.1 TC = 85°C f = 60 Hz 200 0 0.4 0.8 1.2 1.6 2.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 2.4 175 1.0 2.8 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 2.0 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES Figure 3. Typical On–State Characteristics r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 CYCLE I TSM , PEAK SURGE CURRENT (AMP) iF , INSTANTANEOUS FORWARD CURRENT (AMPS) 20 Figure 4.
PAGE 5
2N6504 Series TYPICAL TRIGGER CHARACTERISTICS VGT, GATE TRIGGER VOLTAGE (VOLTS) 10 1 -40 -25 -10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 110 125 5 20 35 65 80 95 Figure 7. Typical Gate Trigger Voltage versus Junction Temperature 100 10 1 -40 -25 -10 50 TJ, JUNCTION TEMPERATURE (°C) Figure 6.
PAGE 6
2N6504 Series PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE AA –T– B F T SEATING PLANE C S 4 Q A 1 2 3 U H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.
PAGE 7
2N6504 Series Notes http://onsemi.
PAGE 8
2N6504 Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein.