Datasheet

Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1 Publication Order Number:
MCR106/D
Preferred Device
Reverse Blocking Thyristors
PNPN devices designed for high volume consumer applications
such as temperature, light and speed control; process and remote control,
and warning systems where reliability of operation is important.
Glass-Passivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., MCR106–6, Date Code
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off–State Voltage
(1)
(T
J
= –40 to 110°C, Sine Wave 50 to
60 Hz, Gate Open) MCR106–6
MCR106–8
V
DRM,
V
RRM
400
600
Volts
On-State RMS Current (T
C
= 93°C)
(180° Conduction Angles)
I
T(RMS)
4.0 Amps
Average On–State Current
(180° Conduction Angles; T
C
= 93°C)
I
T(AV)
2.55 Amps
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
T
J
= 110°C)
I
TSM
25 Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I
2
t 2.6 A
2
s
Forward Peak Gate Power
(T
C
= 93°C, Pulse Width 1.0 µs)
P
GM
0.5 Watt
Forward Average Gate Power
(T
C
= 93°C, t = 8.3 ms)
P
G(AV)
0.1 Watt
Forward Peak Gate Current
(T
C
= 93°C, Pulse Width 1.0 µs)
I
GM
0.2 Amp
Peak Reverse Gate Voltage
(T
C
= 93°C, Pulse Width 1.0 µs)
V
RGM
6.0 Volts
Operating Junction Temperature Range T
J
–40 to
+110
°C
Storage Temperature Range T
stg
–40 to
+150
°C
Mounting Torque
(2)
6.0 in. lb.
(1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of compression washer (B52200-F006 or
equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are
common. (See AN209B). For soldering purposes (either terminal connection
or device mounting), soldering temperatures shall not exceed +200°C. For
optimum results, an activated flux (oxide removing) is recommended.
SCRs
4 AMPERES RMS
400 thru 600 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MCR106–6 TO225AA 500/Box
http://onsemi.com
MCR106–8 TO225AA 500/Box
K
G
A
TO–225AA
(formerly TO–126)
CASE 077
STYLE 2
1
2
3
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode

Summary of content (4 pages)