Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsThyristors & TriacsSensitive gate

 Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 4

1 Publication Order Number:

2N5060/D

Preferred Device

Reverse Blocking Thyristors

Annular PNPN devices designed for high volume consumer

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in an inexpensive plastic TO-226AA (TO-92) package

which is readily adaptable for use in automatic insertion equipment.

• Sensitive Gate Trigger Current — 200 µA Maximum

• Low Reverse and Forward Blocking Current — 50 µA Maximum,

= 110°C

• Low Holding Current — 5 mA Maximum

• Passivated Surface for Reliability and Uniformity

• Device Marking: Device Type, e.g., 2N5060, Date Code

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Peak Repetitive Off–State Voltage

(1)

= 40 to 110°C, Sine Wave,

50 to 60 Hz, Gate Open) 2N5060

2N5061

2N5062

2N5064

DRM,

RRM

100

200

Volts

On-State Current RMS

(180° Conduction Angles; T

= 80°C)

T(RMS)

0.8 Amp

*Average On-State Current

(180° Conduction Angles)

= 67°C)

= 102°C)

T(AV)

0.51

0.255

Amp

*Peak Non-repetitive Surge Current,

= 25°C

(1/2 cycle, Sine Wave, 60 Hz)

TSM

10 Amps

Circuit Fusing Considerations (t = 8.3 ms) I

t 0.4 A

*Forward Peak Gate Power

(Pulse Width 1.0 µsec; T

= 25°C)

0.1 Watt

*Forward Average Gate Power

= 25°C, t = 8.3 ms)

G(AV)

0.01 Watt

*Forward Peak Gate Current

(Pulse Width 1.0 µsec; T

= 25°C)

1.0 Amp

*Reverse Peak Gate Voltage

(Pulse Width 1.0 µsec; T

= 25°C)

RGM

5.0 Volts

*Operating Junction Temperature Range T

–40 to

+110

°C

*Storage Temperature Range T

stg

–40 to

+150

°C

*Indicates JEDEC Registered Data.

(1) V

DRM

and V

RRM

for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

SCRs

0.8 AMPERES RMS

30 thru 200 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

http://onsemi.com

TO–92 (TO–226AA)

CASE 029

STYLE 10

PIN ASSIGNMENT

Gate

Anode

Cathode

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

Summary of content (8 pages)

PAGE 1
2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA (TO-92) package which is readily adaptable for use in automatic insertion equipment.
PAGE 2
N5060 Series THERMAL CHARACTERISTICS Symbol Max Unit *Thermal Resistance, Junction to Case(1) Characteristic RθJC 75 °C/W Thermal Resistance, Junction to Ambient RθJA 200 °C/W — +230* °C *Lead Solder Temperature (Lead Length 1/16″ from case, 10 s Max) q ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit *Peak Repetitive Forward or Reverse Blocking Current(2) (VAK = Rated VDRM or VRRM) TC = 25°C TC = 110°C IDRM, IRRM — — — — 10 50
PAGE 3
2N5060 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM IDRM Peak Repetitive Off State Forward Voltage VRRM IRRM Peak Repetitive Off State Reverse Voltage Anode + VTM on state Peak Forward Blocking Current IH IRRM at VRRM Peak Reverse Blocking Current VTM IH Peak on State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode – 130 120 CASE MEASUREMENT POINT – CENTER
PAGE 4
2N5060 Series CURRENT DERATING 10 ITSM , PEAK SURGE CURRENT (AMP) 5.0 3.0 2.0 TJ = 110°C 1.0 0.7 5.0 3.0 2.0 0.5 1.0 1.0 3.0 5.0 7.0 10 20 30 50 70 100 NUMBER OF CYCLES Figure 4. Maximum Non–Repetitive Surge Current 0.2 0.8 0.1 0.07 0.05 0.03 0.02 120° a α = CONDUCTION ANGLE α = 30° 0.6 60° 180° 90° 0.4 dc 0.2 0.01 0 0 r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED 2.0 0.3 P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS) i T , INSTANTANEOUS ON-STATE CURRENT (AMP) 25°C 7.
PAGE 5
2N5060 Series I GT , GATE TRIGGER CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS VAK = 7.0 V RL = 100 RGK = 1.0 k 0.7 0.6 0.5 0.4 0.3 – 75 –50 –25 0 25 50 75 200 VAK = 7.0 V RL = 100 100 50 2N5062-64 20 10 5.0 2N5060-61 2.0 1.0 0.5 0.2 100 110 –75 –50 –25 0 25 50 75 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Gate Trigger Voltage Figure 8. Typical Gate Trigger Current 4.0 I H , HOLDING CURRENT (NORMALIZED) VG , GATE TRIGGER VOLTAGE (VOLTS) 0.
PAGE 6
2N5060 Series TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL H2A H2A H2B H2B H W2 H4 H5 T1 L1 H1 W1 W L T T2 F1 F2 P2 D P2 P1 P Figure 10. Device Positioning on Tape Specification Inches Symbol Item Millimeter Min Max Min Max 0.1496 0.1653 3.8 4.2 D Tape Feedhole Diameter D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51 Component Lead Pitch 0.0945 0.110 2.4 2.8 F1, F2 H Bottom of Component to Seating Plane H1 Feedhole Location .059 .156 1.5 4.0 0.
PAGE 7
2N5060 Series ORDERING & SHIPPING INFORMATION: 2N5060 Series packaging options, Device Suffix U.S. 2N5060,61,62,64 2N5060,61,62,64RLRA 2N5060,64RLRM Europe Equivalent Shipping Description of TO92 Tape Orientation 2N5060RL1 Bulk in Box (5K/Box) Radial Tape and Reel (2K/Reel) Radial Tape and Fan Fold Box (2K/Box) N/A, Bulk Round side of TO92 and adhesive tape visible Flat side of TO92 and adhesive tape visible PACKAGE DIMENSIONS TO–92 (TO–226AA) CASE 029–11 ISSUE AJ A NOTES: 1.
PAGE 8
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