Datasheet

2N5060 Series
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction to Case
(1)
R
θJC
75 °C/W
Thermal Resistance, Junction to Ambient R
θJA
200 °C/W
*Lead Solder Temperature
(Lead Length 1/16″ from case, 10 s Max)
— +230* °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(2)
(V
AK
= Rated V
DRM
or V
RRM
)T
C
= 25°C
T
C
= 110°C
I
DRM
, I
RRM
—
—
—
—
10
50
µA
µA
ON CHARACTERISTICS
*Peak Forward On–State Voltage
(3)
(I
TM
= 1.2 A peak @ T
A
= 25°C)
V
TM
— — 1.7 Volts
Gate Trigger Current (Continuous dc)
(4)
*(V
AK
= 7 Vdc, R
L
= 100 Ohms) T
C
= 25°C
T
C
= –40°C
I
GT
—
—
—
—
200
350
µA
Gate Trigger Voltage (Continuous dc)
(4)
T
C
= 25°C
*(V
AK
= 7 Vdc, R
L
= 100 Ohms) T
C
= –40°C
V
GT
—
—
—
—
0.8
1.2
Volts
*Gate Non–Trigger Voltage
(V
AK
= Rated V
DRM
, R
L
= 100 Ohms) T
C
= 110°C
V
GD
0.1 — —
Volts
Holding Current
(4)
T
C
= 25°C
*(V
AK
= 7 Vdc, initiating current = 20 mA) T
C
= –40°C
I
H
—
—
—
—
5.0
10
mA
Turn-On Time
Delay Time
Rise Time
(I
GT
= 1 mA, V
D
= Rated V
DRM
,
Forward Current = 1 A, di/dt = 6 A/µs
t
d
t
r
—
—
3.0
0.2
—
—
µs
Turn-Off Time
(Forward Current = 1 A pulse,
Pulse Width = 50 µs,
0.1% Duty Cycle, di/dt = 6 A/µs,
dv/dt = 20 V/µs, I
GT
= 1 mA) 2N5060, 2N5061
2N5062, 2N5064
t
q
—
—
10
30
—
—
µs
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(Rated V
DRM
, Exponential)
dv/dt — 30 — V/µs
*Indicates JEDEC Registered Data.
(1) This measurement is made with the case mounted “flat side down” on a heat sink and held in position by means of a metal clamp over the
curved surface.
(2) R
GK
= 1000 Ω is included in measurement.
(3) Forward current applied for 1 ms maximum duration, duty cycle 1%.
(4) R
GK
current is not included in measurement.