Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsThyristors & TriacsSensitive gate

August, 2005 − Rev. 8

1 Publication Order Number:

C106/D

C106 Series

Preferred Devices

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

Glassivated PNPN devices designed for high volume consumer

applications such as temperature, light, and speed control; process and

remote control, and warning systems where reliability of operation is

important.

Features

• Glassivated Surface for Reliability and Uniformity

• Power Rated at Economical Prices

• Practical Level Triggering and Holding Characteristics

• Flat, Rugged, Thermopad Construction for Low Thermal Resistance,

High Heat Dissipation and Durability

• Sensitive Gate Triggering

• Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−225AA

CASE 077

STYLE 2

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

SCRs

4 A RMS, 200 − 600 Volts

http://onsemi.com

MARKING DIAGRAM & PIN ASSIGNMENT

Y = Year

WW = Work Week

C106xx = Device Code

xx = B, D, D1, M, M1

G = Pb−Free Package

YWW

C106xxG

1. Cathode

2. Anode

3. Gate

Summary of content (6 pages)

PAGE 1
C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important.
PAGE 2
C106 Series MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Characteristic Symbol Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, 50−60 Hz, RGK = 1 kW, TC = −40° to 110°C) Max Unit VDRM, VRRM V 200 400 600 C106B C106D, C106D1* C106M, C106M1* On-State RMS Current (180° Conduction Angles, TC = 80°C) IT(RMS) 4.0 A Average On−State Current (180° Conduction Angles, TC = 80°C) IT(AV) 2.55 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = +110°C) ITSM 20 A I2t 1.
PAGE 3
C106 Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 10 100 mA mA − − 2.2 V − − 15 35 200 500 − − 6.0 0.4 0.5 0.60 0.75 0.8 1.0 0.2 − − − − 0.20 0.35 5.0 7.0 − − − 0.19 0.33 0.07 3.0 6.0 2.0 − 8.
PAGE 4
C106 Series 110 P(AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS) 10 TC, CASE TEMPERATURE (° C) 100 90 DC 80 70 60 50 HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD. 50 to 400 Hz 40 30 20 10 0 .4 .8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 IT(AV) AVERAGE ON-STATE CURRENT (AMPERES) Figure 1. Average Current Derating HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD 50 TO 400Hz. 6 DC 4 2 0 0 .4 .8 1.2 1.6 2.0 2.4 2.6 3.2 3.6 4.0 IT(AV) AVERAGE ON-STATE CURRENT (AMPERES) Figure 2.
PAGE 5
C106 Series PACKAGE INTERCHANGEABILITY The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for mounting compatibility. .295 ____ .305 .145 ____ .155 .148 ____ .158 .115 ____ .130 .425 ____ .435 .400 ____ .360 .095 ____ .
PAGE 6
C106 Series PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.