Datasheet

C106 Series
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4
DC
DC
JUNCTION TEMPERATURE ≈ 110°C
100
10
20
30
40
70
110
90
3.6
80
0 .4 .8 1.61.2 2.0 2.4 3.2
60
4.0
I
T(AV)
AVERAGE ON-STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
50
6
4
2
0
8
0
10
2.8
3.6.4 .8 1.61.2 2.0 2.4 3.2 4.02.6
I
T(AV)
AVERAGE ON-STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
C
°T , CASE TEMPERATURE ( C)
P , AVERAGE ON-STATE POWER DISSIPATION (WATTS)
(AV)
Figure 1. Average Current Derating Figure 2. Maximum On−State Power Dissipation
1
100
95−40 −25 −10 205355080
10
110
T
J
, JUNCTION TEMPERATURE (°C)
65
GT
mI
Figure 3. Typical Gate Trigger Current versus
Junction Temperature
Figure 4. Typical Holding Current versus
Junction Temperature
0.9
0.2
0.3
0.4
0.7
1.0
0.8
95−45 −25 −10 205355080
0.6
110
T
J
, JUNCTION TEMPERATURE (°C)
0.5
65
GT
V
Figure 5. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
, GATE TRIGGER CURRENT ( A)
10
1000
95−40 −25 −10 205355080
100
110
T
J
, JUNCTION TEMPERATURE (°C)
65
H
mI , HOLDING CURRENT ( A)
10
1000
95−40 −25 −10 205355080
100
110
T
J
, JUNCTION TEMPERATURE (°C)
65
L
mI , LATCHING CURRENT ( A)
, GATE TRIGGER VOLTAGE (V)