Datasheet

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: [phone] or [phone] FAX: [phone] [e-mail] www.optekinc.com
Issue A 04/2012
Page 3 of 5
Plastic Infrared Emitting Diode
OP140, OP145 Series
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Storage and Operating Temperature Range -40
o
C to +100
o
C
Reverse Voltage
2.0 V
Continuous Forward Current 50 mA
Peak Forward Current 3.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
(1)
260° C
Power Dissipation
(2)
100 mW
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force
may be applied to the leads when soldering.
2. Derate linearly 1.33 mW/° C above 25° C.
3. E
E(APT)
is a measurement of the average apertured radiant energy incident upon a sensing area 0.180” (4.57 mm) in diameter
perpendicular to and centered on the mechanical axis of the lens and 0.653” (6.60 mm) from the lens tip. E
E(APT)
is not necessarily
uniform within the measured area.
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
E
E (APT)
Apertured Radiant Incidence
OP140A, OP145A
OP140B, OP145B
OP140C, OP145C
OP140D, OP145D
0.40
0.30
0.20
0.10
-
-
-
-
-
0.55
0.40
-
mW/cm
2
I
F
= 20 mA
(3)
V
F
Forward Voltage - - 1.60 V I
F
= 20 mA
I
R
Reverse Current - - 100 µA V
R
= 2.0 V
λ
P
Wavelength at Peak Emission - 935 - nm I
F
= 10 mA
B
Spectral Bandwidth between Half Power
Points
- 50 - nm I
F
= 10 mA
∆λ
P
/∆T Spectral Shift with Temperature - ±0.30 - nm/°C I
F
= Constant
θ
HP
Emission Angle at Half Power Points - 40 - Degree I
F
= 20 mA
t
r
Output Rise Time - 1000 - ns
t
f
Output Fall Time - 500 - ns
I
F(PK)
=100 mA, PW=10 µs, and
D.C.=10.0%