Datasheet

© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specicaon without
noce or liability. All informaon is subject to TT Electronics’ own data and is
considered accurate at me of going to print.
OP165, OP166 Series
Issue C 07/2016 Page 3
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: [phone]
www.optekinc.com | www.electronics.com
Absolute Maximum Rangs (T
A
= 25° C unless otherwise noted)
Storage and Operang Temperature Range -40
o
C to +100
o
C
Reverse Voltage 2.0 V
Connuous Forward Current 50 mA
Peak Forward Current (1 µs pulse width, 300 pps) 3.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C
Power Dissipaon 100 mW
(1)
Electrical Specicaons
Electrical Characteriscs (T
A
= 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
E
E (APT)
Apertured Radiant Incidence
OP165A, OP166A 1.95 - -
mW/cm
2
I
F
= 20 mA
(2)
P
O
Radiant Power Output
OP165W, OP166W 0.50 - -
mW I
F
= 20 mA
V
F
Forward Voltage - - 1.60 V I
F
= 20 mA
I
R
Reverse Current - - 100 µA V
R
= 2 V
λ
P
Wavelength at Peak Emission - 935 - nm I
F
= 10 mA
B
Spectral Bandwidth between Half Power
Points - 50 -
nm I
F
= 10 mA
∆λ
P
/∆T
Spectral Shi with Temperature
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
-
-
±0.30
-
-
nm/°C I
F
= Constant
θ
HP
Emission Angle at Half Power Points
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
-
18
90
-
-
Degree I
F
= 20 mA
t
r
Output Rise Time - 1000 -
ns
I
F(PK)
=100 mA, PW=10 µs, D.C.=10.0%
t
f
Output Fall Time - 500 -
ns
Notes:
1. Derate linearly 1.33 mW/°C above 25°C
2. E
E(APT)
is a measurement of the average apertured rediant incidence ipon a
sensing area 0.081” (2.06 mm) in diameter, perpendicular to and centered
on the mechanical axis of the lens, and 0.590” (14.99 mm) from the
measurement surface. E
E(APT)
is not necessarily uniform within the
measured areas.