Datasheet

© TT electronics plc
Issue E 11/2016 Page 2
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: [phone]
www.electronics.com | sensors@electronics.com
General Note
TT Electronics reserves the right to make changes in product specicaon without
noce or liability. All informaon is subject to TT Electronics’ own data and is
considered accurate at me of going to print.
Six-Element SMD Photodiode
Array
Electrical Characteristics (T
A
= 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
R Responsivity 0.45 - - A/W E
e
= 10 µW, λ = 890 nm, V = 0 V
V
BR
Reverse Breakdown Voltage 50 - - V I
R
= 10 µA
I
D
Reverse Dark Current - - 10 nA V
R
= 10 V, E
e
= 0
B
W
Bandwidth - - 200 kHz T
A
≤ 125ºC
C
T
Capacitance - 10 - pF V
R
= 10 V
Lx W Active Area (per diode) - 3.45 - mm
2
2.73 mm x 1.34 mm
Absolute Maximum Ratings (T
A
= 25° C unless otherwise noted)
Storage and Operating Temperature -55° C to +125° C
Reverse Breakdown Voltage 50 V / minute
Solder reflow time within 5°C of peak temperature is 20 to 40 seconds
(1)
250° C
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Package thermal resistance is 142° C / W
Spectral Responsivity
0
10
20
30
40
50
60
70
80
90
100
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Wavelength (µm)
Relative Response (%)
OPR2100
Warning: Front
Window is pressure
sensitive. Do not
apply pressure or
high vacuum to win-
dow.
Anode Cathode