Datasheet

ManualsBrandsOsram Opto Semiconductors ManualsOptical DetectorsPhototransistor 850nm 100 mA 35 V TO-18

BP 103

Version 1.4 | 2018-05-08

Produktdatenblatt | Version 1.1

www.osram-os.com

BP 103

TO18

Silicon NPN Phototransistor

Applications

— Electronic Equipment

— Industrial Automation (Machine controls, Light

barriers, Vision controls)

— Measurement Levelling

Features:

— Package: clear epoxy

— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

— Spectral range of sensitivity: (typ) 450 ... 1100 nm

— Base connection

— High linearity

Ordering Information

Type Photocurrent Ordering Code

= 5 V;

= 950 nm; E

= 0.5 mW/cm²

PCE

BP 103 125 ... 400 µA Q62702P0075

Only one bin within one packing unit (variation less than 2:1)

Summary of content (14 pages)

PAGE 1
www.osram-os.com Produktdatenblatt | Version 1.1 BP 103 BP 103 TO18 Silicon NPN Phototransistor Applications ——Measurement Levelling ——Electronic Equipment ——Industrial Automation (Machine controls, Light barriers, Vision controls) Features: ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Base connection ——High linearity Ordering Information Type BP 103 Photocurrent VCE = 5 V; λ = 950 nm; Ee = 0.
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BP 103 Maximum Ratings TA = 25 °C Parameter Symbol Operating Temperature Top min. max. -40 °C 80 °C Storage Temperature Tstg min. max. -40 °C 80 °C Collector-emitter voltage VCE max. 35 V Collector current IC max. 100 mA Collector surge current τ ≤ 10 µs ICS max. 200 mA Emitter-basis voltage VEB max. 7V Emitter-collector voltage VEC max. 7V Total power dissipation Ptot max. 150 mW ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD max.
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BP 103 Characteristics TA = 25 °C Parameter Symbol Wavelength of max sensitivity λS max typ. 850 nm Spectral range of sensitivity λ10% typ. 450 ... 1100 nm Chip dimensions LxW typ. 0.55 x 0.55 mm x mm Radiant sensitive area A typ. 0.11 mm² Half angle φ typ. 55 ° Photocurrent VCE = 5 V; Std. Light A; Ev = 1000 lx IPCE typ. 775 µA Photocurrent of collector-base photodiode VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² IPCB typ.
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BP 103 Grouping TA = 25 °C Group Photocurrent VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² min. IPCE Photocurrent VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² max. IPCE 3 125 µA 250 µA 4 200 µA 400 µA Relative Spectral Sensitivity 2), 3) Srel = f (λ) 100 OHF04042 Srel % 80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 nm 1100 λ 4 Version 1.
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BP 103 Directional Characteristics 2), 3) Srel = f (φ) Photocurrent Collector Current 2), 3) IPCE = f (Ee) ; VCE = 5 V 2), 3) ICE = f (VCE); IB = Parameter 5 Version 1.
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BP 103 Collector Current Dark Current 2), 3) ICE = f (VCE); IB = Parameter 2), 3) ICE0 = f (VCE) ; E = 0 ; OHF04049 10 1 nA I CEO 10 0 10 -1 10 -2 0 5 10 15 20 25 30 V 35 VCE Collector-Emitter Capacitance CCE = f (VCE); f = 1 MHz; E = 0 ; 6 5 Collector-Base Capacitance 12 10 8 3 6 2 4 1 2 10 -2 10 -1 10 0 10 1 V 10 2 VCE 6 Version 1.
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BP 103 Emitter-Base Capacitance 2), 3) CEB = f (VEB); f = 1 MHz; E = 0 ; C EB OHF04054 22 pF 18 16 14 12 10 8 6 4 2 0 -3 10 10 -2 10 -1 10 0 10 1 V 10 2 VEB Dark Current Photocurrent 2) ICE0 = f (TA); E = 0 IPCE,rel = f (TA); VCE = 5 V OHF04050 10 4 nA I CEO 10 3 10 2 10 1 10 0 10 -1 10 -2 -25 0 2) 25 50 75 ˚C 100 TA 7 Version 1.
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BP 103 Power Consumption Ptot = f (TA); RthJA = 500 K / W 8 Version 1.
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BP 103 Chip position (2.7 (0.106)) ø0.45 (0.018) 3.6 (0.142) 12.5 (0.492) 3.0 (0.118) 3) .04 5) (0 3 1.1 (0.0 0.9 14.5 (0.571) E C B 2.54 (0.100) spacing Radiant sensitive area 1.1 0.9 (0. (0 043 .03 ) 5) 4) ø4.3 (0.169) ø4.1 (0.161) Dimensional Drawing ø5.5 (0.217) ø5.2 (0.205) GETY6017 Approximate Weight: 190.0 mg Package marking: Emitter 9 Version 1.
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BP 103 TTW Soldering IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C First wave Second wave Continuous line: typical process Dotted line: process limits ∆T < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C 120 ˚C 100 ˚C 100 ca. 5 K/s Typical 50 0 0 20 40 60 80 100 120 140 160 180 200 220 s 240 t 10 Version 1.
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BP 103 Notes The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the LED specified in this data sheet fall into the class exempt group (exposure time 10000 s). Under real circumstances (for exposure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices.
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BP 103 Disclaimer Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.
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BP 103 Glossary 1) IPCEmin: IPCEmin is the min. photocurrent of the specified group. 2) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g.