Datasheet

ManualsBrandsOsram Opto Semiconductors ManualsOptical DetectorsPhotodiode 850 nm 150 mW DIL

BP 104 S

Version 1.6 | 2018-08-22

Produktdatenblatt | Version 1.1

www.osram-os.com

BP 104 S

DIL SMT

Silicon PIN Photodiode

Applications

— LIDAR, Pre-Crash, ACC — Rain Sensors

Features:

— Package: Epoxy, di󰘯use

— Corrosion Robustness Class: 3B

— Quali󰘰cations: The product quali󰘰cation test plan is based on the guidelines of AEC-Q101-REV-C,

Stress Test Quali󰘰cation for Automotive Grade Discrete Semiconductors.

— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

— Suitable for re󰘱ow soldering

— Especially suitable for applications from 400 nm to 1100 nm

— Short switching time (typ. 20 ns)

— Suitable for SMT

Ordering Information

Type Photocurrent Photocurrent Ordering Code

typ.

= 1000 lx; Std. Light A; V

= 5 V E

= 1000 lx; Std. Light A; V

= 5 V

BP 104 S-Z ≥ 40 µA 55 µA Q65110A2626

Summary of content (17 pages)

PAGE 1
www.osram-os.com Produktdatenblatt | Version 1.1 BP 104 S BP 104 S DIL SMT Silicon PIN Photodiode Applications ——LIDAR, Pre-Crash, ACC ——Rain Sensors Features: ——Package: Epoxy, diffuse ——Corrosion Robustness Class: 3B ——Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ——ESD: 2 kV acc.
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BP 104 S Maximum Ratings TA = 25 °C Parameter Symbol Operating Temperature Top min. max. -40 °C 100 °C Storage temperature Tstg min. max. -40 °C 100 °C Reverse voltage VR max. 20 V Total power dissipation Ptot max. 150 mW ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD max. 2 kV 2 Version 1.
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BP 104 S Characteristics TA = 25 °C Parameter Symbol Wavelength of max sensitivity λS max typ. 850 nm Spectral range of sensitivity λ10% typ. 400 ... 1100 nm Radiant sensitive area A typ. 4.84 mm² Dimensions of active chip area LxW typ. 2.2 x 2.2 mm x mm Half angle φ typ. 60 ° Dark current VR = 10 V IR typ. max. Spectral sensitivity of the chip λ = 850 nm Sλ typ. 0.62 A / W Quantum yield of the chip λ = 850 nm η typ. 0.
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BP 104 S Relative Spectral Sensitivity 1), 2) Srel = f (λ) OHF00078 100 S rel % 80 60 40 20 0 400 500 600 700 800 900 nm 1100 λ Directional Characteristics 1), 2) Srel = f (φ) 40 50 30 20 10 60 ϕ 0 1.0 0.8 0.6 70 0.4 80 0.2 0 90 1.0 0.8 100 OHF01402 4 Version 1.6 | 2018-08-22 0.6 0.
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BP 104 S Photocurrent/Open-Circuit Voltage IP (VR = 5 V) / VO = f (Ev) Dark Current 1), 2) IR = f (VR); E = 0 OHF02283 10 3 µA ΙP 1), 2) 10 2 10 4 mV OHF00080 4000 VO ΙR pA 10 3 3000 10 2 2000 10 1 1000 10 0 0 VO ΙP 10 1 10 0 10 -1 10 0 10 1 10 2 10 3 lx 10 4 EV Dark Current 1), 2) IR = f (VR); E = 0 OHF02284 10 2 nA ΙR 10 1 10 0 10 -1 0 2 4 6 8 10 12 14 16 V 20 VR 5 Version 1.
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BP 104 S Capacitance 1), 2) C = f (VR); f = 1 MHz; E = 0; OHF01778 60 pF C 50 40 30 20 10 0 -2 10 10 -1 Dark Current 10 0 10 1 V 10 2 VR 2) IR = f (TA); E = 0; VR = 10 V OHF05717 104 IR nA 103 102 101 100 10-1 0 20 40 60 80 ˚C 100 TA 6 Version 1.
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BP 104 S Power Consumption Ptot = f (TA) OHF00394 160 mW Ptot 140 120 100 80 60 40 20 0 0 20 40 60 80 ˚C 100 TA 7 Version 1.
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BP 104 S Chip position 6.7 (0.264) 6.2 (0.244) 0.9 (0.035) 0.7 (0.028) 4.5 (0.177) 4.3 (0.169) 0...5 ˚ 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 1.6 (0.063) ±0.2 (0.008) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 0.3 (0.012) 3) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Dimensional Drawing Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GEOY6861 Approximate Weight: 44.
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BP 104 S Recommended Solder Pad 3) Reflow Soldering Profile Product complies to MSL Level 4 acc. to JEDEC J-STD-020E OHA04525 300 ˚C T 250 Tp 245 ˚C 240 ˚C tP 217 ˚C 200 150 tL tS 100 50 25 ˚C 0 0 50 100 150 200 250 s 300 t 9 Version 1.
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BP 104 S Profile Feature Symbol Pb-Free (SnAgCu) Assembly Minimum Recommendation Maximum Ramp-up rate to preheat*) 25 °C to 150 °C tS Time tS TSmin to TSmax 60 Ramp-up rate to peak*) TSmax to TP 2 3 100 120 2 3 Unit K/s s K/s Liquidus temperature TL 217 Time above liquidus temperature tL 80 100 s Peak temperature TP 245 260 °C Time within 5 °C of the specified peak temperature TP - 5 K tP 20 30 3 6 Ramp-down rate* TP to 100 °C 10 480 Time 25 °C to TP All temperatures r
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BP 104 S Tape and Reel 4) W1 D0 P0 A N F W E 13.0 ±0.25 P2 Label P1 Direction of unreeling Direction of unreeling W2 Leader: min. 400 mm * Trailer: min. 160 mm * *) Dimensions acc. to IEC 60286-3; EIA 481-D OHAY0324 Reel dimensions [mm] A W Nmin W1 W2 max Pieces per PU 180 mm 12 + 0.3 / - 0.1 60 12.4 + 2 18.4 1500 11 Version 1.
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BP 104 S Barcode-Product-Label (BPL) Dry Packing Process and Materials 3) Moisture-sensitive label or print Barcode label L VE LE see lab e If nk, bla cod bar hu ve y el . H) (R dit mi e ed ag % . RH /60 ˚C rar ck rel 30 N s VE RS inf pa % ainITI TO of to ak 90 d ntNSUC < ns (pe or TIO d , cte itio an bje ing U g coSEND ˚C nd 5 ˚C su ss CO Ais baRE co ± ce y 40 be TU MI CThIS ˚C < ll pro tor SE ati _ < ). urs urs Ho de urs Ho co 72 Ho urs te 48 e Ho 24 6 da e tim e th tim or ).
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BP 104 S Transportation Packing and Materials 3) DE R 18 -1 -1 +Q P OU P: 44 01 C: 99 8 D/ 20 00 (9 D) 210 021 : 34 O H 12 (Q )Q TY : S S em R ic AM o nd O uc p to to H rs NO TC BA 3G 5 14 2 (6 P) NO : 12 T 11 00 LO (1 T) NO : OD M Y DE -1 18 P -1 + Q R G RO UP : (G ) 44 01 D/ C: (9 D) 0 AM 00 TY :2 )Q O SR 34 NO : (X ) PR O D 5 14 2 110 0 (Q A R ic NO : O S em S (1 T) LO T NO (6 P) : 12 3G BA TC H H 12 o M n O d u p ct to o rs M Muster
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BP 104 S Notes The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for exposure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices.
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BP 104 S Disclaimer Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.
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BP 104 S Glossary 1) Testing temperature: TA = 25°C 2) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devices, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g.