Datasheet

BPX 38
3
Version 1.3 | 2018-05-02
Characteristics
T
A
= 25 °C
Parameter Symbol Values
Wavelength of max sensitivity
λ
S max
typ. 880 nm
Spectral range of sensitivity
λ
10%
typ. 450 ... 1120
nm
Chip dimensions L x W typ. 1.02 x 1.02
mm x mm
Radiant sensitive area A typ. 0.675 mm²
Half angle
φ
typ. 40 °
Photocurrent
V
CE
= 5 V; Std. Light A; E
v
= 1000 lx
I
PCE
typ. 1900 µA
Photocurrent of collector-base photodiode
E
e
= 0.5 mW/cm²; λ = 950 nm; V
CB
= 5 V
I
PCB
typ. 1.8 µA
Photocurrent of collector-base photodiode
E
v
= 1000 lx; Std. Light A ; V
CB
= 5 V
I
PCB
typ. 5.5 µA
Dark current
V
CE
= 25 V; E = 0
I
CE0
typ.
max.
20 nA
100 nA
Rise time
I
C
= 1 mA; V
CC
= 5 V; R
L
=1kΩ
t
r
typ. 12 ns
Fall time
I
C
= 1 mA; V
CC
= 5 V; R
L
=1kΩ
t
f
typ. 12 ns
Collector-emitter saturation voltage
1)
I
C
= I
PCE,min
X 0.3; E
e
= 0.5 mW/cm²
V
CEsat
typ. 200 mV
Capacitance
V
CE
= 0 V; f = 1 MHz; E = 0
C
CE
typ. 23 pF
Capacitance
V
CB
= 0 V; f = 1 MHz; E = 0
C
CB
typ. 39 pF
Capacitance
V
EB
= 0 V; f = 1 MHz; E = 0
C
EB
typ. 47 pF
Thermal resistance junction ambient real R
thJA
max. 450 K / W