Datasheet

BPX 81
3
Version 1.3 | 2018-05-02
Characteristics
T
A
= 25 °C
Parameter Symbol Values
Wavelength of max sensitivity
λ
S max
typ. 850 nm
Spectral range of sensitivity
λ
10%
typ. 450 ... 1100
nm
Chip dimensions L x W typ. 0.55 x 0.55
mm x mm
Radiant sensitive area A typ. 0.11 mm²
Half angle
φ
typ. 18 °
Photocurrent
V
CE
= 5 V; Std. Light A; E
v
= 1000 lx
I
PCE
typ. 1900 µA
Dark current
V
CE
= 20 V; E = 0
I
CE0
typ.
max.
1 nA
50 nA
Rise time
I
C
= 1 mA; V
CC
= 5 V; R
L
=1kΩ
t
r
typ. 7 µs
Fall time
I
C
= 1 mA; V
CC
= 5 V; R
L
=1kΩ
t
f
typ. 7 µs
Collector-emitter saturation voltage
1)
I
C
= I
PCE,min
X 0.3; E
e
= 0.5 mW/cm²
V
CEsat
typ. 150 mV
Capacitance
V
CE
= 0 V; f = 1 MHz; E = 0
C
CE
typ. 7.5 pF
Thermal resistance junction ambient real R
thJA
max. 750 K / W
Grouping
T
A
= 25 °C
Group Photocurrent Photocurrent
V
CE
= 5 V; λ = 950 nm; E
e
= 0.5 mW/cm² V
CE
= 5 V; λ = 950 nm; E
e
= 0.5 mW/cm²
min. max.
I
PCE
I
PCE
2 250 µA 500 µA
3 400 µA 800 µA
4 630 µA 1250 µA