Datasheet

ManualsBrandsOsram Opto Semiconductors ManualsOptical DetectorsPhototransistor 870nm 50 mA 70 V T1 3/4

SFH 313 FA

Version 1.3 | 2018-08-22

Produktdatenblatt | Version 1.1

www.osram-os.com

SFH 313 FA

Radial T1 3/4

Silicon NPN Phototransistor

Applications

— Electronic Equipment

— Highbay Industrial

— Industrial Automation (Machine Controls, Light

Barriers, Vision Controls)

— White Goods

Features:

— Package: black epoxy

— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

— 5 mm plastic package

— High photosensitivity

— Especially suitable for applications from 740 nm to 1080 nm

— Spectral range of sensitivity: (typ) 740 ... 1080 nm

Ordering Information

Type Photocurrent Ordering Code

= 5 V;

= 950 nm; E

= 0.5 mW/cm²

PCE

SFH 313 FA 2500 ... 20000 µA Q62702P1674

SFH 313 FA-2/3 4000 ... 12500 µA Q62702P3597

SFH 313 FA-3/4 6300 ... 20000 µA Q62702P5196

Summary of content (14 pages)

PAGE 1
www.osram-os.com Produktdatenblatt | Version 1.1 SFH 313 FA SFH 313 FA Radial T1 3/4 Silicon NPN Phototransistor Applications ——Electronic Equipment ——Industrial Automation (Machine Controls, Light Barriers, Vision Controls) ——Highbay Industrial ——White Goods Features: ——Package: black epoxy ——ESD: 2 kV acc.
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SFH 313 FA Maximum Ratings TA = 25 °C Parameter Symbol Operating temperature Top min. max. -40 °C 100 °C Storage temperature Tstg min. max. -40 °C 100 °C Collector-emitter voltage VCE max. 70 V Collector current IC max. 50 mA Collector surge current τ ≤ 10 µs ICS max. 100 mA Emitter-collector voltage VEC max. 7V Total power dissipation Ptot max. 200 mW ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD max. 2 kV 2 Version 1.
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SFH 313 FA Characteristics TA = 25 °C Parameter Symbol Wavelength of max sensitivity λS max typ. 870 nm Spectral range of sensitivity λ10% typ. 740 ... 1080 nm Chip dimensions LxW typ. 1x1 mm x mm Radiant sensitive area A typ. 0.55 mm² Half angle φ typ. 10 ° Dark current VCE = 20 V; E = 0 ICE0 typ. max. Rise time IC = 1 mA; VCC = 5 V; RL = 1 kΩ tr typ. 13 µs Fall time IC = 1 mA; VCC = 5 V; RL = 1 kΩ tf typ. 13 µs Collector-emitter saturation voltage 1) IC = IPCE,min X 0.
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SFH 313 FA Relative Spectral Sensitivity 2), 3) Srel = f (λ) OHF02331 100 S rel % 80 60 40 20 0 400 Directional Characteristics 600 800 10 0 1000 nm 1200 λ 2), 3) Srel = f (φ) 40 30 20 ϕ 50 60 1.0 0.8 0.6 70 0.4 80 0.2 0 90 1.0 0.8 100 OHF02330 4 Version 1.3 | 2018-08-22 0.6 0.
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SFH 313 FA Photocurrent Photocurrent 2), 3) IPCE = f (Ee) ; VCE = 5 V IPCE = f (VCE), Ee = Parameter OHF02337 10 2 mA OHF02336 10 2 mA Ι PCE Ι PCE 10 2), 3) 1 1 mW cm 2 0.5 mW cm 2 10 1 10 0 0.25 10 mW cm 2 0.1 -1 10 -2 -3 10 10 -2 Dark Current mW/cm 2 Ee 10 0 2), 3) ICE0 = f (VCE) ; E = 0 ; OHF02341 10 2 nA Ι CEO 10 1 10 0 10 -1 10 -2 10 20 30 40 50 0 5 Version 1.
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SFH 313 FA Collector-Emitter Capacitance 2), 3) CCE = f (VCE); f = 1 MHz; E = 0 ; OHF00349 18 pF 16 CCE 14 12 10 8 6 4 2 0 -2 10 10 -1 Dark Current 10 0 10 1 V 10 2 V CE Photocurrent 2) ICE0 = f (TA); E = 0 2) IPCE,rel = f (TA); VCE = 5 V OHF02342 10 3 nA Ι CEO Ι PCE 25 10 2 Ι PCE OHF01524 1.6 1.4 1.2 1.0 10 1 0.8 0.6 10 0 0.4 0.2 20 40 60 10 -1 0 6 Version 1.
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SFH 313 FA Power Consumption Ptot = f (TA) Ptot OHF02340 250 mW 200 150 100 50 0 0 20 40 60 80 ˚C 100 TA 7 Version 1.
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SFH 313 FA Dimensional Drawing 4) 9.0 (0.354) 1.8 (0.071) 1.2 (0.047) 29 (1.142) 27 (1.063) Cathode (Diode) Collector (Transistor) Approximate Weight: 353.0 mg Package marking: Collector 8 Version 1.3 | 2018-08-22 7.5 (0.295) ø4.8 (0.189) 0.8 (0.031) 0.5 (0.020) 2.54 (0.100) spacing 0.6 (0.024) 0.4 (0.016) Area not flat 7.8 (0.307) ø5.1 (0.201) 8.2 (0.323) 5.9 (0.232) 5.5 (0.217) 5.7 (0.224) 0.6 (0.024) 5.1 (0.201) Chip position 0.4 (0.
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SFH 313 FA Recommended Solder Pad Pad 1: emitter 9 Version 1.
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SFH 313 FA TTW Soldering IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C First wave Second wave Continuous line: typical process Dotted line: process limits ∆T < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C 120 ˚C 100 ˚C 100 ca. 5 K/s Typical 50 0 0 20 40 60 80 100 120 140 160 180 200 220 s 240 t 10 Version 1.
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SFH 313 FA Notes The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for exposure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices.
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SFH 313 FA Disclaimer Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.
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SFH 313 FA Glossary 1) IPCEmin: IPCEmin is the min. photocurrent of the specified group. 2) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devices, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line.