Datasheet

ManualsBrandsOSRAM ManualsPhotodiodes & PhototransistorsPhotodiode DIL 1100 nm 60 °

2014-01-17 1

201 4- 01- 1 7

Silicon PIN Photodiode with Daylight Blocking Filter

Silizium-PIN-Fotodiode mit Tageslichtsperrfilter

Version 1.1

BP 104 F

Ordering Information

Bestellinformation

Maximum Ratings (T

= 25 °C)

Grenzwerte

Features: Besondere Merkmale:

• Especially suitable for applications of 950 nm • Speziell geeignet für Anwendungen bei 950 nm

• Short switching time (typ. 20 ns) • Kurze Schaltzeit (typ. 20 ns)

• DIL plastic package with high packing density • DIL-Plastikbauform mit hoher Packungsdichte

Applications Anwendungen

• Photointerrupters • Lichtschranken

• Remote control • Fernsteuerung

Type: Photocurrent Ordering Code

Typ: Fotostrom Bestellnummer

λ = 950 nm, E

= 1 mW/cm

, V

= 5 V

[µA]

BP 104 F 34 (≥ 25) Q62702P0084

Parameter Symbol Values Unit

Bezeichnung Symbol Werte Einheit

Operating and storage temperature range

Betriebs- und Lagertemperatur

; T

stg

-40 ... 100 °C

Reverse voltage

Sperrspannung

20 V

Total power dissipation

Verlustleistung

tot

150 mW

Summary of content (9 pages)

PAGE 1
2014-01-17 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.1 BP 104 F Features: Besondere Merkmale: • Especially suitable for applications of 950 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • Speziell geeignet für Anwendungen bei 950 nm • Kurze Schaltzeit (typ.
PAGE 2
Version 1.1 BP 104 F Characteristics (TA = 25 °C) Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent Fotostrom (VR = 5 V, Ee = 1 mW/cm2, λ = 950 nm) IP Wavelength of max. sensitivity Wellenlänge der max. Fotoempfindlichkeit 34 (≥ 25) µA λS max 950 nm Spectral range of sensitivity Spektraler Bereich der Fotoempfindlichkeit λ10% 800 ...
PAGE 3
Version 1.1 BP 104 F Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Capacitance Kapazität (VR = 0 V, f = 1 MHz, E = 0) C0 Temperature coefficient of VO Temperaturkoeffizient von VO TCV -2.6 mV / K Temperature coefficient of ISC Temperaturkoeffizient von ISC (λ = 950 nm) TCI 0.1 %/K Noise equivalent power Rauschäquivalente Strahlungsleistung (VR = 10 V, λ = 950 nm) NEP 0.036 pW / Hz½ Detection limit Nachweisgrenze D* 6.
PAGE 4
Version 1.
PAGE 5
Version 1.1 BP 104 F Dark Current Dunkelstrom IR = f(TA), VR = 10 V, E = 0 OHF00082 10 3 Ι R nA 10 2 10 1 10 0 10 -1 0 20 40 60 80 ˚C 100 TA Directional Characteristics Winkeldiagramm Srel = f(ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 2014-01-17 1.0 0.8 0.6 0.
PAGE 6
Version 1.1 BP 104 F Package Outline Maßzeichnung 0.3 (0.012) 0.8 (0.031) 0.35 (0.014) 0.2 (0.008) 0.6 (0.024) 0.4 (0.016) 0 ... 5˚ 5.08 (0.200) spacing Photosensitive area 2.20 (0.087) x 2.20 (0.087) Approx. weight 0.1 g GEOY6075 Dimensions in mm (inch). / Maße in mm (inch). Package 2014-01-17 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 4.5 (0.177) 4.3 (0.169) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) Chip position 3.5 (0.138) 3.0 (0.118) 0.7 (0.028) 1.2 (0.047) 0.6 (0.024) 0.4 (0.016) 0.
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Version 1.1 BP 104 F Gehäuse DIL, Harz TTW Soldering Wellenlöten (TTW) IEC-61760-1 TTW / IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C First wave Second wave Continuous line: typical process Dotted line: process limits ΔT < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C 120 ˚C 100 ˚C 100 ca.
PAGE 8
Version 1.1 BP 104 F Disclaimer Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you.