Datasheet

ManualsBrandsOSRAM ManualsPhotodiodes & PhototransistorsPhotodiode DIL 1100 nm 60 °

2014-01-10 1

201 4- 01- 1 0

Silicon PIN Photodiode

Silizium-PIN-Fotodiode

Version 1.1

BPW 34

Ordering Information

Bestellinformation

Features: Besondere Merkmale:

• Especially suitable for applications from 400 nm to

1100 nm

• Speziell geeignet für Anwendungen im Bereich von

400 nm bis 1100 nm

• Short switching time (typ. 20 ns) • Kurze Schaltzeit (typ. 20 ns)

• DIL plastic package with high packing density • DIL-Plastikbauform mit hoher Packungsdichte

Applications Anwendungen

• Photointerrupters • Lichtschranken

• Industrial electronics • Industrieelektronik

• For control and drive circuits • Messen / Steuern / Regeln

• IR remote control of hi-fi and TV sets, video tape

recorders, dimmers, remote controls of various

equipment

• IR-Fernsteuerung von Fernseh- und

Rundfunkgeräten, Videorecordern, Lichtdimmern,

Gerätefernsteuerungen

Type: Photocurrent Ordering Code

Typ: Fotostrom Bestellnummer

= 1000 lx, Std. Light A, V

= 5 V

[µA]

BPW 34 80 (≥ 50) Q62702P0073

Summary of content (9 pages)

PAGE 1
2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 BPW 34 Features: Besondere Merkmale: • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ.
PAGE 2
Version 1.1 BPW 34 Maximum Ratings (TA = 25 °C) Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range Betriebs- und Lagertemperatur Top; Tstg -40 ...
PAGE 3
Version 1.1 BPW 34 Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Quantum yield of the chip Quantenausbeute des Chips (λ = 850 nm) η 0.90 Electro ns /Photon Open-circuit voltage Leerlaufspannung (Ev = 1000 lx, Std. Light A) VO 365 (≥ 300) mV Short-circuit current Kurzschlussstrom (Ev = 1000 lx, Std. Light A) ISC 80 µA Rise and fall time Anstiegs- und Abfallzeit (VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA) tr, tf 0.
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Version 1.
PAGE 5
Version 1.1 BPW 34 Dark Current Dunkelstrom IR = f(TA), VR = 10 V, E = 0 Capacitance Kapazität C = f(VR), f = 1 MHz, E = 0 OHF00081 100 C OHF00082 10 3 Ι R nA pF 80 10 2 70 60 10 1 50 40 30 10 0 20 10 0 -2 10 10 -1 10 0 10 1 10 -1 V 10 2 0 20 40 60 80 ˚C 100 TA VR Directional Characteristics Winkeldiagramm Srel = f(ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 2014-01-10 1.0 0.8 0.6 0.
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Version 1.1 BPW 34 Package Outline Maßzeichnung 5.4 (0.213) Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 4.3 (0.169) 3.5 (0.138) 3.0 (0.118) 0.8 (0.031) 0.6 (0.024) 3.7 (0.146) 1.2 (0.047) 0.7 (0.028) 4.9 (0.193) 4.5 (0.177) 0.6 (0.024) 0.4 (0.016) Cathode marking 4.0 (0.157) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 0.35 (0.014) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0.4 (0.016) 0.5 (0.020) 0 ... 5˚ 5.08 (0.200) spacing Photosensitive area 2.65 (0.
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Version 1.1 BPW 34 TTW Soldering Wellenlöten (TTW) IEC-61760-1 TTW / IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C First wave Second wave Continuous line: typical process Dotted line: process limits ΔT < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C 120 ˚C 100 ˚C 100 ca.
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Version 1.1 BPW 34 Disclaimer Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you.