Datasheet

ManualsBrandsOSRAM ManualsPhotodiodes & PhototransistorsPhototransistor Non-standard 1100 nm 18 °

2014-01-14 1

201 4- 01- 1 4

Silicon NPN Phototransistor

NPN-Silizium-Fototransistor

Version 1.1

BPX 81

Features: Besondere Merkmale:

• Spectral range of sensitivity: (typ) 450 ... 1100

• Spektraler Bereich der Fotoempfindlichkeit:

(typ) 450 ... 1100 nm

• Package: Miniature Array, Epoxy • Gehäuse: Miniatur Array, Harz

• Special: One-digit array package • Besonderheit: Einstellige Zeilenbauform

• High linearity • Hohe Linearität

• Available in groups • Gruppiert lieferbar

Applications Anwendungen

• Computer-controlled flashes • Computer-Blitzlichtgeräte

• Miniature photointerrupters • Miniatur Lichtschranken

• Industrial electronics • Industrieelektronik

• For control and drive circuits • Messen / Steuern / Regeln

Summary of content (11 pages)

PAGE 1
2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 BPX 81 Features: Besondere Merkmale: • Spectral range of sensitivity: (typ) 450 ... 1100 nm • Package: Miniature Array, Epoxy • Special: One-digit array package • High linearity • Available in groups • Spektraler Bereich der Fotoempfindlichkeit: (typ) 450 ...
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Version 1.1 BPX 81 Ordering Information Bestellinformation Type: Photocurrent Typ: Fotostrom Ordering Code Bestellnummer 2 λ = 950 nm, Ee = 0.5 mW/cm , VCE = 5 V IPCE [µA] BPX 81 > 250 Q62702P0020 BPX 81-2/3 250 ... 800 Q62702P3583 BPX 81-3 400 ... 800 Q62702P0043S003 BPX 81-3/4 > 400 Q62702P3584 BPX 81-4 > 630 Q62702P0043S004 Note: Only one bin within one packing unit (variation less than 2:1) Anm.
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Version 1.1 BPX 81 Characteristics (TA = 25 °C) Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength of max. sensitivity Wellenlänge der max. Fotoempfindlichkeit λS max 850 nm Spectral range of sensitivity Spektraler Bereich der Fotoempfindlichkeit λ10% 450 ...
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Version 1.1 BPX 81 Grouping (TA = 25 °C, λ = 950 nm) Gruppierung Group Min Photocurrent Max Photocurrent Typ Photocurrent Rise and fall time Gruppe Min Fotostrom Max Fotostrom Typ Fotostrom Ee = 0.5 mW/cm2, VCE = 5 V Ee = 0.5 mW/cm2, VCE = 5 V EV = 1000 lx, Std. IC = 1 mA, Light A, VCE = 5 V VCE = 5 V, RL = 1 kΩ Anstiegs- und Abfallzeit IPCE, min [µA] IPCE, max [µA] IPCE [µA] tr, tf [µs] BPX 81-2 250 500 1200 5.
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Version 1.1 BPX 81 0.25 (0.010) 0.15 (0.006) 0 ... 5˚ 0.7 (0.028) 0.6 (0.024) 3.6 (0.142) 3.2 (0.126) 3.0 (0.118) 0.5 (0.020) 0.4 (0.016) 3.5 (0.138) 2.4 (0.094) 2.1 (0.083) 1.9 (0.075) 1.7 (0.067) Chip position 2.7 (0.106) 2.5 (0.098) Package Outline Maßzeichnung 2.1 (0.083) 1.5 (0.059) A 2.54 (0.100) spacing Radiant sensitive area (0.4 x 0.4) 1.4 (0.055) 1.0 (0.039) Collector (BPX 81) Cathode (LD 261) 0.4 A 1) Detaching area for tools, flash not true to size. Approx. weight 0.
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Version 1.1 BPX 81 TTW Soldering Wellenlöten (TTW) IEC-61760-1 TTW / IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C First wave Second wave Continuous line: typical process Dotted line: process limits ΔT < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C 120 ˚C 100 ˚C 100 ca.
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Version 1.1 BPX 81 Disclaimer Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you.