Datasheet

Data Sheet 6 1999-05-18
SFH 9201
Opto Semiconductors
Max. permissible forward current
I
F
= f (T
A
)
Forward voltage (typ.) of the diode
V
F
= f (T)
Transistor capacitance (typ.)
C
CE
= f (V
CE
), T
A
=25
o
C, f = 1 MHz
Relative spectral emission of emitter
(GaAs) I
rel
= f (λ) and
detector (Si) S
rel
= f (λ)
0
OHO02259
Ι
F
A
T
0 20 40 60 80 100C
20
40
60
80
100
120
mA
1
OHO02256
T
-40
F
V
-20 0 20 40 60 100
1.05
1.10
1.15
1.20
1.25
1.30
V
5 mA
10 mA
Ι
F
= 20 mA
C
OHO00374
10
C
CE
-2
pF
V
CE
50
-1
10
0
10
1
10
2
10V
40
35
30
25
20
15
10
5
0
0
OHO00786
S
rel
λ
700
rel
Ι
20
40
60
80
%
100
800
900 1000 nm 1100
Detector
Emitter
Collector current I
C
= f (I
F
), spacing d
to reflector = 1 mm, 90% reflection
Output characteristics (typ.)
I
C
= f (V
CE
), spacing to reflector:
d = 1 mm, 90% reflection, T
A
= 25
o
C
OHO00783
0
C
Ι
mA
0
mA
F
Ι
0.5
1.0
1.5
2.0
2.5
3.0
4 8 12 16 20
=5 V
CE
V
V
OHO00781
CE
0.1
0
Ι
C
Ι
F
= 25 mA
= 20 mA
Ι
F
= 15 mA Ι
F
= 10 mA Ι
F
= 5 mA Ι
F
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
mA
2.0
10 V
0
10
1