Transistors Specification Sheet

2SD1149
2
SJC00208BED
V
CE(sat)
 I
C
h
FE
 I
C
f
T
 I
E
P
C
 T
a
I
C
 V
CE
I
C
 V
BE
C
ob
 V
CB
NV  I
C
NV  V
CE
0 16040 12080
0
240
200
160
120
80
40
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(
°C
)
012108264
0
80
60
20
40
T
a
= 25°C
20 µA
30 µA
40 µA
50 µA
60 µA
80 µA
10 µA
I
B
= 100 µA
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
0 2.01.60.4 1.20.8
0
60
50
40
30
20
10
V
CE
= 10 V
T
a
= 75°C
−25°C
25°C
Base-emitter voltage V
BE
(
V
)
Collector current I
C
(
mA
)
0.1 1 10 100
0.01
0.1
1
10
100
I
C
/ I
B
= 10
25°C
−25°C
T
a
= 75°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
mA
)
0.1 1 10 100
0
1 800
1 500
1 200
900
600
300
V
CE
= 10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(
mA
)
− 0.1 −1 −10 −100
0
200
160
120
80
40
V
CB
= 10 V
T
a
= 25°C
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
1 10 100
0
6
5
4
3
2
1
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(
V
)
Collector output capacitance (Common base, input open circuited)
C
ob
(pF)
0.01 0.1 1
0
100
80
60
40
20
V
CE
= 10 V
G
V
= 80 dB
Function = FLAT
T
a
= 25°C
5 kΩ
R
g
= 100 kΩ
22 kΩ
Noise voltage NV
(
mV
)
Collector current I
C
(
mA
)
1 10 100
0
100
80
60
40
20
I
C
= 1 mA
G
V
= 80 dB
Function = FLAT
T
a
= 25°C
5 kΩ
R
g
= 100 kΩ
22 kΩ
Noise voltage NV
(
mV
)
Collector-emitter voltage V
CE
(
V
)
This product complies with the RoHS Directive (EU 2002/95/EC).