Datasheet

HE PhotoMOS (AQV252G)
1
ds_x615_en_aqv252g: 181206J
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the SMD terminal shape indicator “A” and the package style indicator “X” or “Z” are not marked on the relay.
RATING
Load current greatly
increased using
next-generation MOSFET
High Capacity 6-pin Type
HE PhotoMOS
(AQV252G)
Type
Output rating*
Part No.
Packing quantity
Through hole
terminal
Surface-mount terminal
Load
voltage
Load
current
Tube packing style
Tape and reel packing style
Tube Tape and reel
Picked from the
1/2/3-pin side
Picked from the
4/5/6-pin side
AC/DC type 60 V 2.5 A AQV252G AQV252GA AQV252GAX AQV252GAZ
1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
VDE
8.8
6.4
3.9
.346
.252
.154
mm inch
6.4
3.6
8.8
.252
.142
.346
(Height includes standoff)
1
2
3
6
5
4
FEATURES
1. Greatly increased load current in
the same package size.
2. Greatly improved specs allow you
to use this in place of mercury and
mechanical relays.
TYPICAL APPLICATIONS
• Crime and fire prevention market (use in
I/O for alarm and security devices, etc.)
• Amusement market
• Measuring instrument market (circuit
testers, etc.)
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Item Symbol
Type of
connection
AQV252G(A) Remarks
Input
LED forward current I
F 50 mA
LED reverse voltage V
R 5 V
Peak forward current I
FP 1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation P
in 75 mW
Output
Load voltage (peak AC) V
L 60 V
Continuous load current
(peak AC)
I
L
A 2.5 A
A connection: Peak AC, DC
B, C connection: DC
B 3.5 A
C 5.0 A
Peak load current I
peak 6.0 A 100ms (1 shot), VL = DC
Power dissipation P
out 500 mW
Total power dissipation P
T 550 mW
I/O isolation voltage V
iso 1,500 V AC
Temperature limits
Operating T
opr –40°C to +85°C –40°F to +185°F Non-condensing at low temperatures
Storage T
stg –40°C to +100°C –40°F to +212°F

Summary of content (3 pages)