Datasheet

GU-E PhotoMOS (AQY41 ❍ EH)
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the initial letters of the product number “AQY”, the SMD terminal shape indicator “A” and the package type indicator “X” and
“Z” are omitted from the seal.
RATING
1. Absolute maximum ratings (Ambient temperature: 25 ° C 77 ° F)
General use and
economy type.
DIP (1 Form B) 4-pin type.
Reinforced insulation
5,000V type.
GU-E PhotoMOS
(AQY41 ❍ EH)
Type
I/O
isolation
voltage
Output rating*
Part No.
Packing quantity
Through hole
terminal
Surface-mount terminal
Load
voltage
Load
current
Tube packing style
Tape and reel packing style
Tube
Tape and
reel
Picked from the
1/2-pin side
Picked from the
3/4-pin side
AC/DC
type
Reinforced
5,000 V
60 V 550 mA AQY412EH AQY412EHA AQY412EHAX AQY412EHAZ
1 tube contains 100 pcs.
1 batch contains 1,000 pcs.
1,000 pcs.350 V 130 mA AQY410EH AQY410EHA AQY410EHAX AQY410EHAZ
400 V 120 mA AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ
Item Symbol AQY412EH (A) AQY410EH (A) AQY414EH (A) Remarks
Input
LED forward current I F
50 mA
LED reverse voltage V
R
5 V
Peak forward current I
FP
1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation P
in
75 mW
Output
Load voltage (peak AC) V
L
60 V 350 V 400 V
Continuous load current I
L
0.55 A 0.13 A 0.12 A
Peak load current I
peak
1.5 A 0.4 A 0.3 A 100 ms (1 shot), V
L
= DC
Power dissipation P
out
500 mW
Total power dissipation P
T
550 mW
I/O isolation voltage V
iso
5,000 V AC
Temperature
limits
Operating T
opr
–40 ° C to +85 ° C –40 ° F to +185 ° F Non-condensing at low temperatures
Storage T
stg
–40 ° C to +100 ° C –40 ° F to +212 ° F
TESTING
(AQY410EH, 414EH) (AQY412EH)
VDE
mm inch
FEATURES
1. 60V type couples high capacity
(0.55A) with low on-resistance (1Ω)
2. This is the low-cost version
PhotoMOS 1 Form B output type relay.
The attainment of economical pricing will
broaden its market even further.
Item GU-E type
Part No. AQY410EH AQY412EH
Load voltage 350V 60V
Continuous
load current
0.13A 0.55A
ON resistance
(typ.)
18Ω 1Ω
3.2
.126
6.4
.252
4.78
.188
2.9
.114
6.4
.252
4.78
.188
1
2
4
3
3. Normally closed type (1 Form B) is
low on-resistance.
(All AQ❍4 PhotoMOS are Form B
types. And also the Form A types have
a low on-resistance.)
This has been realized thanks to the
built-in MOSFET processed by our
proprietary method, DSD (Double-
diffused and Selective Doping) method.
Cross section of the normally-closed type
of power MOS
4. Reinforced insulation 5,000 V type
More than 0.4 mm internal insulation
distance between inputs and outputs.
Conforms to EN41003, EN60950
(reinforced insulation).
5. Compact 4-pin DIP size
The device comes in a compact
(W)6.4×(L)4.78×(H)3.2mm
(W).252×(L).188×(H).126inch, 4-pin DIP
size
6. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
7. High sensitivity, low ON resistance
Can control a maximum 0.13 A load
current with a 5 mA input current. Low
ON resistance of 18Ω (AQY410EH).
Stable operation because there are no
metallic contact parts.
6. Low-level off-state leakage current
TYPICAL APPLICATIONS
• Power supply
• Measuring equipment
• Security equipment
• Modem
• Telephone equipment
• Electricity, plant equipment
• Sensors
Source electrode
N
–
N
+
N
+
N
+
P
+
N
+
N
+
P
+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
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