Datasheet

ManualsBrandsPANASONIC ManualsDiodesSchottky Diode

Product Standards

Schottky Barrier Diode

DB2J20900L

 Absolute Maximum Ratings Ta = 25 C

50Hz sine wave 1 cycle ( Non-repetitive peak current )

Page

500

+85 °C

Repetitive peak reverse voltage

Forward current (Average)

VRRM

IF(AV)

Junction temperature Tj 125

IFSM

 Packaging

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

Code

1. Cathode

―

Panasonic SMini2-F5-B

JEITA SC-90A

(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

 Marking Symbol

DB2J20900L

Silicon epitaxial planar type

For high frequency rectification

DB3X209K in SMini2 type package

 Features



Short reverse recovery time trr

Low forward voltage VF

Halogen-free / RoHS compliant

2. Anode

Unit: mm

1of4

°C

ToprOperating ambient temperature

Internal Connection

UnitParameter Symbol Rating

Reverse voltage VR 20

Note:

Non-repetitive peak forward surge current

°C-55 to +125Storage temperature Tstg

-40 to

2.5

1.25

0.7

1.7

0.13

0.35

0.5

Doc No.

TT4-EA-12434

Revision.

Established

2010-04-05

Revised

2013-12-10

Summary of content (5 pages)

PAGE 1
Doc No. TT4-EA-12434 Revision. 4 Product Standards Schottky Barrier Diode DB2J20900L DB2J20900L Silicon epitaxial planar type Unit: mm For high frequency rectification DB3X209K in SMini2 type package 1.25 0.35  Features 0.13 2 1.7 2.5  Low forward voltage VF  Short reverse recovery time trr  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol:BE 1 0.5  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 0.7 1.
PAGE 2
Doc No. TT4-EA-12434 Revision. 4 Product Standards Schottky Barrier Diode DB2J20900L  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol VF1 VF2 IR Ct Forward voltage Reverse current Terminal capacitance Reverse recovery time *1 trr Conditions Min Typ Max IF = 10 mA IF = 500 mA VR = 10 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 0.1 × IR, RL = 100  0.3 0.5 30 Unit V 7 A pF 2.4 ns Note: 1.
PAGE 3
Doc No. TT4-EA-12434 Revision. 4 Product Standards Schottky Barrier Diode DB2J20900L Technical Data ( reference ) IF - VF IR - VR 1.0E-01 1.0E+00 1.0E-01 100 ℃ 1.0E-02 85 ℃ 1.0E-03 25 ℃ 1.0E-04 Ta = 125 ℃ 1.0E-03 1.0E-04 85 ℃ 1.0E-05 25 ℃ 1.0E-06 1.0E-07 -40 ℃ 1.0E-08 -40 ℃ 1.0E-05 0.0 100 ℃ 1.0E-02 Reverse current IR (A) Fpward current IF (A) Ta = 125 ℃ 1.0E-09 0.1 0.2 0.3 0.4 0.5 0.
PAGE 4
Doc No. TT4-EA-12434 Revision. 4 Product Standards Schottky Barrier Diode DB2J20900L SMini2-F5-B Unit: mm 1.25±0.10 +0.05 0.35±0.05 0.13-0.02 (5°) 2.5±0.2 1.7±0.1 2 0.50±0.05 0.4±0.1 1 0 to 0.05 (0.15) 0.7±0.1 (5°)  Land Pattern (Reference) (Unit: mm) 0.9 2.4 0.9 0.9 1.
PAGE 5
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.