Datasheet

ManualsBrandsPANASONIC ManualsDiodesDB2J31700L

Product Standards

Schottky Barrier Diode

DB2J31700L

 Absolute Maximum Ratings Ta = 25 C

Note: *1 For embedded alumina substrate (substrate size: 5 cm× 5 cm)

*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Page

°C

+85

Non-repetitive peak forward surge current

IFSM

Forward current (average)

IF(AV)

VR 30

 Packaging

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

Code

1. Cathode

―

Panasonic SMini2-F5-B

JEITA SC-90A

DB2J31700L

Silicon epitaxial planar type

For rectification

 Features

2. Anode



Forward current (Average) IF(AV) = 1 A rectification is possible

Low forward voltage VF

Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

 Marking Symbol:

1of4

Unit: mm

Internal Connection

Junction temperature Tj 125 °C

UnitParameter Symbol Rating

Reverse voltage (direct current)

Storage temperature Tstg

-40 toToprOperating ambient temperature

°C-55 to +125

2.5

1.25

0.7

1.7

0.13

0.35

0.5

Doc No.

TT4-EA-11464

Revision.

Established

2009-09-08

Revised

2013-04-25

Summary of content (5 pages)

PAGE 1
Doc No. TT4-EA-11464 Revision. 3 Product Standards Schottky Barrier Diode DB2J31700L DB2J31700L Silicon epitaxial planar type Unit: mm 1.25 0.35 For rectification 0.13 2  Features 1.7 2.5  Low forward voltage VF  Forward current (Average) IF(AV) = 1 A rectification is possible  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1  Marking Symbol: 3S 0.5 0.
PAGE 2
Doc No. TT4-EA-11464 Revision. 3 Product Standards Schottky Barrier Diode DB2J31700L  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol VF1 VF2 IR Ct Forward voltage Reverse current Terminal capacitance Reverse recovery time *1 trr Conditions Min IF = 700 mA IF = 1A VR = 30 V VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1×IR, RL = 100  Typ Max Unit 0.41 0.46 10 22 0.48 0.52 100 V V μA pF 7.8 ns Note) 1.
PAGE 3
Doc No. TT4-EA-11464 Revision. 3 Product Standards Schottky Barrier Diode DB2J31700L Technical Data ( reference ) IR - VR IF - VF 1.E-01 Ta = 125 °C 1.E+00 Reverse current IR (A) Forward current IF (A) 1.E+01 85 °C 1.E-01 1.E-02 25 °C 1.E-03 -40 °C 1.E-04 1.E-05 0.0 1.E-02 1.E-03 1.E-04 25 °C 1.E-05 1.E-06 -40 °C 1.E-07 1.E-08 0.1 0.2 0.3 0.4 0.5 0.
PAGE 4
Doc No. TT4-EA-11464 Revision. 3 Product Standards Schottky Barrier Diode DB2J31700L SMini2-F5-B Unit: mm 1.25±0.10 +0.05 0.35±0.05 0.13-0.02 (5°) 2.5±0.2 1.7±0.1 2 0.50±0.05 0.4±0.1 1 0 to 0.05 (0.15) 0.7±0.1 (5°)  Land Pattern (Reference) (Unit: mm) 0.9 2.4 0.9 0.9 1.
PAGE 5
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.