Datasheet

ManualsBrandsPANASONIC ManualsDiodesSchottky Diode

Product Standards

Schottky Barrier Diode

DB2J50100L

 Absolute Maximum Ratings Ta = 25 C

Note: *1

50Hz sine wave 1 cycle ( Non-repetitive peak current )

Page

200

°C

+85 °Cto

Repetitive peak reverse voltage

Forward current (Average)

VRRM

IF (AV)

Junction temperature Tj 125

 Packaging

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

Peak forward current

Code

1. Cathode

―

Panasonic SMini2-F5-B

JEITA SC-90A

DB2J50100L

Silicon epitaxial planar type

For high speed switching circuits

 Features

2. Anode



Low terminal capacitance Ct

Short reverse recovery time trr

Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

 Marking Symbol

1of4

Unit: mm

Internal Connection

UnitParameter Symbol Rating

Reverse voltage VR 50

°C-55 to +125Storage temperature Tstg

-40Operating ambient temperature Topr

IFM 300

Non-repetitive peak forward surge current

IFSM 1

2.5

1.25

0.7

1.7

0.13

0.35

0.5

Doc No.

TT4-EA-12350

Revision.

Established

2010-02-24

Revised

2013-12-12

Summary of content (5 pages)

PAGE 1
Doc No. TT4-EA-12350 Revision. 2 Product Standards Schottky Barrier Diode DB2J50100L DB2J50100L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.25 0.35  Features 0.13 2 1.7 2.5  Short reverse recovery time trr  Low terminal capacitance Ct  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol:BC 1 0.5  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 0.7 1. Cathode 2.
PAGE 2
Doc No. TT4-EA-12350 Revision. 2 Product Standards Schottky Barrier Diode DB2J50100L  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol VF1 VF2 IR Ct Forward voltage Reverse current Terminal capacitance Reverse recovery time *1 trr Conditions Min IF = 30 mA IF = 200 mA VR = 50 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 10 mA RL = 100 Ω Typ Max 0.36 0.55 200 Unit V 4 μA pF 1.6 ns Note)1.
PAGE 3
Doc No. TT4-EA-12350 Revision. 2 Product Standards Schottky Barrier Diode DB2J50100L Technical Data ( reference ) IF - VF IR - VR 1.E-01 1.E-02 Ta = 125 ℃ Reverse current IR (A) Forward current IF (A) 1.E+00 100 ℃ 1.E-02 1.E-03 85 ℃ 25 ℃ 1.E-04 -40 ℃ 1.E-05 0.0 Ta = 125 ℃ 1.E-03 85 ℃ 100 ℃ 1.E-04 1.E-05 25 ℃ 1.E-06 1.E-07 -40 ℃ 1.E-08 1.E-09 0.1 0.2 0.3 0.4 0.5 0.
PAGE 4
Doc No. TT4-EA-12350 Revision. 2 Product Standards Schottky Barrier Diode DB2J50100L SMini2-F5-B Unit: mm 1.25±0.10 +0.05 0.35±0.05 0.13-0.02 (5°) 2.5±0.2 1.7±0.1 2 0.50±0.05 0.4±0.1 1 0 to 0.05 (0.15) 0.7±0.1 (5°)  Land Pattern (Reference) (Unit: mm) 0.9 2.4 0.9 0.9 1.
PAGE 5
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.