Datasheet

Ver. CEDPublication date: May 2013
1
DB3X313K
Silicon epitaxial planar type
For small current rectification
DB2J313 in Mini3 type package
 Features
 Low forward voltage V
F
and small reverse current I
R
 Low terminal capacitance C
t
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: 4J
 Packaging
DB3X313K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Repetitive peak reverse voltage V
RRM
30 V
Forward current (Average)
I
F(AV)
200 mA
Peak forward current I
FM
300 mA
Non-repetitive peak forward surge current
*
1
I
FSM
1 A
Junction temperature T
j
125
°C
Operating ambient temperature T
opr
–40 to +85
°C
Storage temperature T
stg
–55 to +125
°C
Note)
*
1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 200 mA 0.55 V
Reverse current I
R
V
R
= 30 V 50
mA
Terminal capacitance C
t
V
R
= 10 V, f = 1 MHz 3.8 pF
Reverse recovery time
*
1
t
rr
I
F
= I
R
= 100 mA, I
rr
= 0.1 × I
R
,
R
L
= 100 Ω
1.5 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz
*
1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
I
rr
= 0.1 × I
R
Unit: mm
1: Anode
2: N.C.
3: Cathode
Panasonic Mini3-G3-B
JEITA SC-59A
Code TO-236AA/SOT-23
1 2
3