Datasheet

ManualsBrandsPANASONIC ManualsDiodesSchottky Diode

Product Standards

Schottky Barrier Diode

DB3X317K0L

 Absolute Maximum Ratings Ta = 25 C

Note: *1 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Page

°C

+85

Non-repetitive peak forward surge current

IFSM

Repctitive peak reverse voltage VRRM 30

Reverse voltage VR 30

Forward current (Average) IF(AV)

 Packaging

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

Code

1. Anode

2. N.C

TO-236AA/SOT-23

Panasonic Mini3-G3-B

JEITA SC-59A

DB3X317K0L

Silicon epitaxial planar type

For high frequency rectification

 Features

3. Cathode



Forward current (Average) IF(AV) = 1 A rectification is possible

Low forward voltage VF

Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

 Marking Symbol:

1of4

Unit: mm

Internal Connection

Junction temperature Tj 125 °C

UnitParameter Symbol Rating

Storage temperature Tstg

-40 toToprOperating ambient temperature

°C-55 to +125

2.8

2.9

1.1

1.5

0.4

1.9

0.16

(0.95)(0.95)

Doc No.

TT4-EA-12493

Revision.

Established

2010-03-29

Revised

2013-04-26

Summary of content (5 pages)

PAGE 1
Doc No. TT4-EA-12493 Revision. 2 Product Standards Schottky Barrier Diode DB3X317K0L DB3X317K0L Silicon epitaxial planar type Unit: mm 2.9 For high frequency rectification 0.4 0.16 3  Features 1.5 2.8  Low forward voltage VF  Forward current (Average) IF(AV) = 1 A rectification is possible  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1  Marking Symbol: 5R (0.95)(0.95) 1.9  Packaging 1. Anode 2. N.C 3.
PAGE 2
Doc No. TT4-EA-12493 Revision. 2 Product Standards Schottky Barrier Diode DB3X317K0L  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol VF1 VF2 IR Ct Forward voltage Reverse current Terminal capacitance Reverse recovery time *1 trr Conditions Min IF = 700 mA IF = 1 A VR = 30 V VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 × IR, RL = 100  Typ Max Unit 0.41 0.46 10 22 0.48 0.52 100 V V μA pF ns 7.8 Note) 1.
PAGE 3
Doc No. TT4-EA-12493 Revision. 2 Product Standards Schottky Barrier Diode DB3X317K0L Technical Data ( reference ) IR - VR IF - VF 1.E-01 Ta = 125 °C 1.E+00 Reverse current IR (A) Forward current IF (A) 1.E+01 85 °C 1.E-01 1.E-02 25 °C 1.E-03 -40 °C 1.E-04 1.E-05 0.0 1.E-03 1.E-04 25 °C 1.E-05 1.E-06 -40 °C 1.E-07 1.E-08 0.1 0.2 0.3 0.4 0.5 0.
PAGE 4
Doc No. TT4-EA-12493 Revision. 2 Product Standards Schottky Barrier Diode DB3X317K0L Mini3-G3-B Unit: mm +0.20 2.90-0.05 +0.10 0.16-0.06 +0.10 0.40-0.05 (5°) +0.2 2 1.9±0.1 0.4±0.2 (0.95) (0.95) (0.65) 1 2.8-0.3 +0.25 1.50-0.05 3 +0.3 1.1-0.1 +0.2 0 to 0.1 1.1-0.1 (10°)  Land Pattern (Reference) (Unit: mm) 2.4 1.0 1.0 1.
PAGE 5
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.