Datasheet

ManualsBrandsPANASONIC ManualsRectifiersDB4J406K0R

Product Standards

Schottky Barrier Diode

DB4J406K0R

 Absolute Maximum Ratings Ta = 25 °C

Note: *1 Value of each diode in double used.

*2 The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

Page

°C-55 to +125Storage temperature Tstg

-40 toToprOperating ambient temperature

Junction temperature Tj 125 °C

UnitParameter Symbol Rating

Internal Connection

1of4

Unit: mm

3. Cathode2

4. Cathode1

1. Anode1

Short reverse recovery time trr

Small reverse current IR

Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

 Marking Symbol:

DB4J406K0

Silicon epitaxial planar type

For high speed switching circuits

 Features

Panasonic SMini4-F3-B

JEITA SC-113BB

Anode2

 Basic Part Number :

Dual DB2J406 (Parallel)

Repetitive peak reverse voltage VRRM 40

 Packaging

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

+85

100

°C

IFSM

0.75

1Non-repetitive peak Singie

forward surge current

Peak forward current

Singie

Doubie

300

225

IFM

Reverse voltage

Forward current

Singie

Doubie

Code ―

2.1

2.0

0.7

1.25

0.13

(0.65)

1.3

0.3

(0.65)

1 2

Doc No.

TT4-EA-12481

Revision.

Established

2010-03-24

Revised

2013-12-13

Summary of content (5 pages)

PAGE 1
Doc No. TT4-EA-12481 Revision. 2 Product Standards Schottky Barrier Diode DB4J406K0R DB4J406K0R Silicon epitaxial planar type Unit: mm For high speed switching circuits 2.0 0.3 Features 0.13 4 3 1 2 1.25 2.1 y Small reverse current IR y Short reverse recovery time trr y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: 4B 0.7 (0.65)(0.65) 1.3 Basic Part Number : Dual DB2J406 (Parallel) 1. Anode1 2.
PAGE 2
Doc No. TT4-EA-12481 Revision. 2 Product Standards Schottky Barrier Diode DB4J406K0R Electrical Characteristics Ta = 25 °C ± 3 °C Parameter Symbol Forward voltage Reverse current Terminal capacitance Reverse recovery time Note: VF IR Ct *1 trr Conditions Min IF = 100 mA VR = 40 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 10 mA RL = 100 Ω Typ Max Unit 0.6 5 2.2 V µA pF 0.9 ns 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2.
PAGE 3
Doc No. TT4-EA-12481 Revision. 2 Product Standards Schottky Barrier Diode DB4J406K0R Technical Data ( reference ) IF - VF IR - VR 1.0E-01 1.0E-02 1.0E-02 Ta = 125 ℃ 85 ℃ 1.0E-03 25 ℃ 1.0E-04 1.0E-05 0.0 Reverse current IR (A) Forward current (A) 1.0E+00 -40 ℃ Ta = 125 ℃ 1.0E-03 1.0E-04 1.0E-05 85 ℃ 1.0E-06 25 ℃ 1.0E-07 -40 ℃ 1.0E-08 1.0E-09 1.0E-10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.
PAGE 4
Doc No. TT4-EA-12481 Revision. 2 Product Standards Schottky Barrier Diode DB4J406K0R SMini4-F3-B Unit: mm 2.0±0.1 +0.05 0.13-0.02 2 1.3±0.1 (0.425) (0.65) (0.65) (0.15) 1 (5°) 3 1.25±0.10 4 2.1±0.1 +0.05 0.30-0.02 0 to 0.1 0.7±0.1 (5°) Land Pattern (Reference) (Unit: mm) 0.8 1.9 1.3 0.
PAGE 5
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.