Datasheet

Ver. DEDPublication date: October 2013
1
DMC56406
Silicon NPN epitaxial planar type
For digital circuits
DMC26406 in SMini6 type package
 Features
 High forward current transfer ratio h
FE
with excellent linearity
 Low collector-emitter saturation voltage V
CE(sat)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: L8
Basic Part Number
Dual DRC2143T (Individual)
 Packaging
DMC564060R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Tr1
Tr2
Collector-base voltage (Emitter open) V
CBO
50 V
Collector-emitter voltage (Base open) V
CEO
50 V
Collector current I
C
100 mA
Overall
Total power dissipation P
T
150 mW
Junction temperature T
j
150
°C
Operating ambient temperature T
opr
–40 to +85
°C
Storage temperature T
stg
–55 to +150
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 0 50 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 0 50 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 50 V, I
E
= 0 0.1 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 50 V, I
B
= 0 0.5 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 6 V, I
C
= 0 0.01 mA
Forward current transfer ratio h
FE
V
CE
= 10 V, I
C
= 5 mA 160 460

Collector-emitter saturation voltage V
CE(sat)
I
C
= 10 mA, I
B
= 0.5 mA 0.25 V
Input voltage (ON) V
I(on)
V
CE
= 0.2 V, I
C
= 5 mA 1.0 V
Input voltage (OFF) V
I(off)
V
CE
= 5 V, I
C
= 100 µA 0.4 V
Input resistance R
1
–30% 4.7 +30% kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Panasonic SMini6-F3-B
JEITA SC-113DB
Code SOT-363
(E2)
4
Tr1
Tr2
(B2)
5
(C1)
6
1
(E1)
3
(C2)
2
(B1)
R
1
R
1
Resistance value R
1
4.7 kΩ