Datasheet

Product Standards
Transistors with Built-in Resistor
DRA2115T0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note
)
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
-30% 100 +30%
k

Emitter-base cutoff current (Collector open)
Input resistance
R1
Forward current transfer ratio
hFE VCE = -10 V, IC = -5 mA
Collector-emitter saturation voltage
VCE(sat) IC = -10 mA, IB = -0.5 mA
V
-0.4 V
V
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
-4.3
160
-0.5
-0.25
μA
-0.01 mA
460 -
IEBO VEB = -6 V, IC = 0
Collector-emitter cutoff current (Base open)
ICEO VCE = -50 V, IB = 0
V
Collector-base cutoff current (Emitter open)
ICBO VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter voltage (Base open)
VCEO IC = -2 mA, IB = 0 -50
Collector-base voltage (Emitter open)
VCBO IC = -10 μA, IE = 0 -50
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Resistance
value
Junction temperature Tj °C
Total power dissipation PT
200
mW
150
Collector current IC
-100
mA
Collector-emitter voltage (Base open) VCEO
-50
V
Collector-base voltage (Emitter open) VCBO
-50
V
Internal Connection
Max Unit
V
R1
100
k
1of3
Unit: mm
Min Typ
SC-59A
Collector
JEITA
DRA2115T0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC2115T
 Features



Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
Unit
 Marking Symbol:
LT
Code
Base
Emitter
TO-236AA/SOT-23
Panasonic
 Packaging
Mini3-G3-B
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
+85 °COperating ambient temperature Topr -40 to
Parameter Symbol Rating
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
E
Doc No.
TT4-EA-11720
Revision.
2
Established
:
2009-10-29
Revised
:
2014-01-20