Datasheet

Product Standards
Transistors with Built-in Resistor
DRA3114E0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note
)
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page
10 +30%
k

Resistance ratio R1/R2
0.8 1.0 1.2 -
Input resistance R1
-30%
-0.8 V
-2.1 V
Input voltage
Vi(on)
VCE = -0.2 V, IC = -5 mA
Vi(off)
VCE = -5 V, IC = -100 μA
-
Collector-emitter saturation voltage VCE(sat)
IC = -10 mA, IB = -0.5 mA -0.25 V
Forward current transfer ratio hFE
VCE = -10 V, IC = -5 mA 35
-0.5 μA
Emitter-base cutoff current (Collector open)
IEBO
VEB = -6 V, IC = 0 -0.5 mA
Collector-emitter cutoff current (Base open)
ICEO
VCE = -50 V, IB = 0
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter voltage (Base open) VCEO
IC = -2 mA, IB = 0 -50
Max Unit
Collector-base voltage (Emitter open) VCBO
IC = -10 μA, IE = 0 -50 V
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Junction temperature Tj 150 °C
Total power dissipation PT
100
mW
Collector current IC
-100
mA
Collector-emitter voltage (Base open) VCEO
-50
V
Collector-base voltage (Emitter open) VCBO
-50
V
Internal Connection
Resistance
value
R1
10
k

R2 10
k

1of3
Unit: mm
Min Typ
SC-105AA
Collector


Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRA3114E0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC3114E
DRA9114E in SSSMini3 type package
 Features
 Marking Symbol:
LB
Code
Base
Emitter
SOT-723
Panasonic
 Packaging
SSSMini3-F2-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
+85 °COperating ambient temperature Topr -40 to
C
B
R
1
R
2
E
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
Doc No.
TT4-EA-11667
Revision.
2
Established
:
2009-10-23
Revised
:
2014-02-07