Datasheet

Product Standards
Transistors with Built-in Resistor
DRA3114Y0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note
)
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
+150 °C
Parameter
1.
2.
3.
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
Parameter Symbol Rating Unit
 Marking Symbol:
LC
Code
Base
Emitter
SOT-723
Panasonic
 Packaging
SSSMini3-F2-B
JEITA
DRA3114Y0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC3114Y
DRA9114Y in SSSMini3 type package
 Features


Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
SC-105AA
Collector
1of3
Unit: mm
Min Typ
Internal Connection
Resistance
value
R1
10
k

R2 47
k

Collector-base voltage (Emitter open) VCBO
-50
V
Collector-emitter voltage (Base open) VCEO
-50
V
Collector current IC
-100
mA
Total power dissipation PT
100
mW
Junction temperature Tj 150 °C
Conditions
Storage temperature Tstg -55 to
Max Unit
Collector-base voltage (Emitter open) VCBO
IC = -10 μA, IE = 0 -50 V
Symbol
Collector-emitter voltage (Base open) VCEO
IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open)
ICBO
VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter cutoff current (Base open)
ICEO
VCE = -50 V, IB = 0 -0.5 μA
Emitter-base cutoff current (Collector open)
IEBO
VEB = -6 V, IC = 0 -0.2 mA
Forward current transfer ratio hFE
VCE = -10 V, IC = -5 mA 80 -
Collector-emitter saturation voltage VCE(sat)
IC = -10 mA, IB = -0.5 mA -0.25 V
Input voltage
Vi(on)
VCE = -0.2 V, IC = -5 mA
Vi(off)
VCE = -5 V, IC = -100 μA
-1.7 V
-0.5 V
Input resistance R1
-30% 10 +30%
k

Resistance ratio R1/R2
0.17 0.21 0.25 -
C
B
R
1
R
2
E
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
Doc No.
TT4-EA-11669
Revision.
2
Established
:
2009-10-23
Revised
:
2014-02-12