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Product Standards
Transistors with Built-in Resistor
DRA3115G0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
Page
+85 °COperating ambient temperature Topr -40 to
1.
2.
3.
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
Parameter Symbol Rating Unit
Marking Symbol:
LX
Code
Base
Emitter
SOT-723
Panasonic
Packaging
SSSMini3-F2-B
JEITA
DRA3115G0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC3115G
DRA9115G in SSSMini3 type package
Features
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
SC-105AA
Collector
Unit: mm
Internal Connection
Resistance
value
1of3
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -50 V
Collector current IC -100 mA
Total power dissipation PT 100 mW
Symbol Conditions
Storage temperature Tstg -55 to
Collector-base voltage (Emitter open)
VCBO IC = -10 μA, IE = 0 -50 V
Parameter
Collector-emitter voltage (Base open)
VCEO IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open)
ICBO VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter cutoff current (Base open)
ICEO VCE = -50 V, IB = 0 -0.5 μA
Emitter-base cutoff current (Collector open)
IEBO VEB = -6 V, IC = 0 -0.1 mA
Forward current transfer ratio
hFE VCE = -10 V, IC = -5 mA 80 -
-0.9
Collector-emitter saturation voltage
VCE(sat) IC = -10 mA, IB = -0.5 mA
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μAV
-0.25 V
Input resistance
R2 -30%
°C
100 +30%
k
V
-0.4
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
R2
100
k
+150 °C
Junction temperature Tj 150
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
C
B
R
2
E
Doc No.
TT4-EA-11671
Revision.
2
Established
:
Revised
:

Summary of content (4 pages)